MUR2X030A12
Super Fast Recovery Rectifier
Module Type 60 A
Features
• High Surge Capability
• Type 1200 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
SOT-227 Package
V
RRM
= 1200 V
I
F(AV)
= 60 A
Maximum ratings
Parameter
Maximum recurrent peak reverse voltage
Maximum DC blocking voltage
Maximum RMS Voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
DC
V
RMS
T
j
T
stg
Conditions
Value
1200
1200
840
-55 to 175
-55 to 175
Unit
V
V
V
°C
°C
Electrical characteristics at 25 °C, unless otherwise specified
Parameter
Average forward current
Peak forward surge current
(per pkg)
(per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
V
iSO
t
rr
Conditions
T
C
= 125 °C
8.3 ms, half sine
I
FM
= 30 A, Tj = 25 °C
T
j
= 25 °C
T
j
= 150 °C
A.C. 1 minute
I
F
=0.5 A, I
R
=1.0 A, I
RR
= 0.25 A
Value
60
400
2.35
Unit
A
A
V
Maximum instantaneous forward voltage*
(per leg)
Maximum instantaneous reverse current at
rated DC blocking voltage (per leg)
Isolation voltage
Maximum reverse recovery time (per leg)
25
3
2500
85
µA
mA
V
ns
Thermal characteristics
Maximum thermal resistance junction to case
(per leg)
* Pulse Test: Pulse width 300 µs, Duty < 2 %
R
Θjc
1.2
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1
MUR2X030A12
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
Microchip MCU
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