Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas） | 75 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 25 V |
| 最大漏极电流 (ID) | 50 A |
| 最大漏源导通电阻 | 0.0151 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 350 A |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IPB09N03LAGATMA1 | IPB09N03LA | IPI09N03LA | IPB09N03LA G | |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | 50 A, 25 V, 0.0155 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 50 A, 25 V, 0.0155 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | MOSFET N-CH 25V 50A D2PAK |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | - |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | PLASTIC, TO-263, 3 PIN | IN-LINE, R-PSIP-T3 | - |
| Reach Compliance Code | compliant | _compli | compli | - |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | - |
| 雪崩能效等级（Eas） | 75 mJ | 75 mJ | 75 mJ | - |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| 最小漏源击穿电压 | 25 V | 25 V | 25 V | - |
| 最大漏极电流 (ID) | 50 A | 50 A | 50 A | - |
| 最大漏源导通电阻 | 0.0151 Ω | 0.0151 Ω | 0.0155 Ω | - |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95代码 | TO-263AB | TO-263AB | TO-262AA | - |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | - |
| 元件数量 | 1 | 1 | 1 | - |
| 端子数量 | 2 | 2 | 3 | - |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | - |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| 最大脉冲漏极电流 (IDM) | 350 A | 350 A | 350 A | - |
| 表面贴装 | YES | YES | NO | - |
| 端子形式 | GULL WING | GULL WING | THROUGH-HOLE | - |
| 端子位置 | SINGLE | SINGLE | SINGLE | - |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - |
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