BTS 282 Z
Speed TEMPFET
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
Avalanche rated
High current pinning
1
7
VPT05754
1
7
VPT05167
1
7
Type
BTS 282 Z
G
Pin 2
A
Pin 3
K
Pin 5
S
Pin 1 + 6 + 7
Pin
1
2
3
4
5
6
7
Symbol
S
G
A
D
K
S
S
V
DS
49 V
R
DS(on)
6.5 m
Package
P-TO220-7-3
P-TO220-7-180
P-TO220-7-230
Ordering Code
Q67060-S6004-A2
Q67060-S6005-A2
Q67060-S6007
D
Pin 4 and TAB
Temperature
Sensor
Function
Source
Gate
Anode Temperature Sensor
Drain
Cathode Temperature Sensor
Source
Source
1
2000-09-11
BTS 282 Z
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage,
R
GS
= 20
k
Gate source voltage
Symbol
V
DS
V
Value
49
49
20
A
Unit
V
Nominal load current (ISO 10483)
V
GS
= 10 V,
V
DS
I
D(ISO)
Continuous drain current
1)
T
C
= 100 °C,
V
GS
= 4.5V
Pulsed drain current
Avalanche energy, single pulse
Power dissipation
T
C
= 25 °C
Operating temperature
2)
Peak temperature ( single event )
Storage temperature
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
2
2000-09-11
I
D
= 36 A,
R
GS
= 25
V
GS
= 4.5 V,
V
DS
0.5 V,
T
C
= 85 °C
I
D
I
D puls
E
AS
P
tot
T
j
T
jpeak
T
stg
0.5 V,
T
C
= 85 °C
-40 ...+175
200
-55 ... +150
E
40/150/56
DGR
V
GS
36
52
80
320
2
300
J
W
°C
BTS 282 Z
Thermal Characteristics
Parameter
Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
2
cooling area
1)
R
thJC
R
th(JA)
R
th(JA)
-
-
-
-
-
33
0.5
62
40
K/W
Symbol
min.
Values
typ.
max.
Unit
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 240 µA
Zero gate voltage drain current
V
DS
= 45 V,
V
GS
= 0 V,
T
j
= -40 °C
V
DS
= 45 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 45 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V,
T
j
= 25 °C
V
GS
= 20 V,
V
DS
= 0 V,
T
j
= 150 °C
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 36 A
V
GS
= 10 V,
I
D
= 36 A
R
DS(on)
-
-
8.2
5.8
9.5
6.5
I
GSS
-
-
10
20
100
100
m
V
GS(th)
I
DSS
-
-
-
-
0.1
-
0.1
1
100
nA
1.2
1.6
2
µA
V
(BR)DSS
49
-
-
V
Symbol
min.
Values
typ.
max.
Unit
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3
2000-09-11
BTS 282 Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Dynamic Characteristics
Forward transconductance
V
DS
>2*I
D
*R
DS(on)max
,
I
D
= 80 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
Rise time
R
G
= 1.3
t
d(on)
-
30
45
ns
C
rss
-
570
715
C
oss
-
1090
1357
g
fs
C
iss
30
-
70
3850
-
4800
S
pF
Symbol
min.
Values
typ.
max.
Unit
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
Turn-off delay time
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
Fall time
R
G
= 1.3
V
DD
= 30 V,
V
GS
= 4.5 V,
I
D
= 80 A,
Gate Charge Characteristics
Gate charge at threshold
V
DD
= 40 V, ID=≥0,1 A ,
V
GS
= 0 to 1 V
Gate charge at 5.0 V
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 5 V
Gate charge total
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 40 V,
I
D
= 80 A
4
2000-09-11
R
G
= 1.3
R
G
= 1.3
t
r
-
37
56
t
d(off)
-
70
105
t
f
-
36
55
Q
g(th)
Q
g(5)
Q
g(total)
V
(plateau)
-
-
-
-
3.8
92
155
3.4
5.7
138
232
-
nC
V
BTS 282 Z
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 95 A
Reverse recovery time
V
R
= 30 V,
I
F
=I
S
,
di
F
/dt
= 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F
=I
S
,
di
F
/dt
= 100 A/µs
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at
http://www.infineon.com/tempfet/
Symbol
min.
I
S
I
FM
V
SD
t
rr
Q
rr
80
320
-
-
-
Values
typ.
-
-
1.25
105
0.31
max.
-
-
1.6
157
0.47
Unit
A
V
ns
µC
Forward voltage
I
AK(on)
= 5 mA,
T
j
= -40...+150 °C
I
AK(on)
= 1.5 mA,
T
j
= 150 °C
Sensor override
t
P
= 100 µs,
T
j
= -40...+150 °C
Forward current
T
j
= -40...+150 °C
Sensor override
t
P
= 100 µs,
T
j
= -40...+150 °C
V
AK(on)
-
-
-
I
AK(on)
-
-
1.3
-
-
-
-
1.4
0.9
10
5
600
V
mA
5
2000-09-11
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