PTAB182002TC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 1805 – 1880 MHz
Description
The PTAB182002TC is a 180-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1880 MHz frequency band. Features include input and output
matching, high gain and a thermally-enhanced package with ear-
less copper flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTAB182002TC
Package H-49248H-4
(formed leads)
Features
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 500 mA, V
GS
= 1.2 V,
ƒ = 1805, 1842, 1880 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
1805 MHz
1842 MHz
1880 MHz
•
Asymmetric Doherty design
- Main: P
1dB
= 70 W Typ
- Peak: P
1dB
= 120 W Typ
Broadband internal matching
Integrated ESD protection
Capable of handling 3:1 VSWR @ 30 V, 50 W
(average) output power (one-carrier WCDMA
signal, 10 dB PAR, Doherty test fixture)
Copper flange for enhanced thermal performance
Pb-free and RoHS-compliant
30
25
20
15
60
50
•
•
•
Efficiency
Gain (dB)
40
30
Drain Efficiency(%)
•
•
Gain
10
5
0
32
36
40
44
48
b182002t c gr6
20
10
0
52
Output Power (dBm)
RF Characteristics
Two-carrier Specifications
(device with flat leads tested in an Infineon Doherty production test fixture)
V
DD
= 28 V, V
GSPK
= (V
GS
at I
DQ
= 900 mA)–1.90 V, I
DQ
= 520 mA, P
OUT
= 29 W avg., ƒ
1
= 1870 MHz, ƒ
2
= 1880 MHz. 3GPP WCDMA
signal: 3.84 MHz bandwidth, 7.5 dB PAR @ 0.01% CCDF.
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
14.0
44
—
Typ
14.8
47
–27.6
Max
—
—
–24.0
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 04, 2014-07-01
PTAB182002TC
DC Characteristics
Characteristic
(each side)
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
RI
GSS
DS(on)
R
DS(on)
R
DS(on)
V
GS
V
GS
IV
GS
GSS
Min
65
—
—
—
—
2.5
—
2.5
0.7
0.7
—
Typ
—
—
—
0.15
—
0.15
0.09
0.09
3.0
3.0
1.1
1.1
—
Max
—
1.0
10.0
1.0
—
—
3.5
—
3.5
1.5
1.5
1.0
Unit
V
µA
µA
µA
Ω
Gate Leakage Current
On-state Resistance (main)
On-state Resistance (main)
(peak)
Operating Gate Voltage (main)
On-state Resistance (peak)
(main)
Operating Gate Voltage (peak)
Operating Gate Voltage
Gate Leakage Current (peak)
12
0V
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
I
DQ
= 0.1 mA
V
GS
= 28 V, V
DS
= 520 V
DS
10
520 mA
V
DS
= 28 V, I
DQ
= 0 mA
I
DQ
= 0 V
V
GS
= 28 V, V
DS
= 0 mA
DS
10
Ω
Ω
V
V
µA
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 170 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–6 to +10
200
–40 to +150
0.34
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTAB182002TC V2 R250
Order Code
Package and Description
Shipping
Tape & Reel, 250 pcs
PTAB182002TCV2R250XTMA1 H-49248H-4, ceramic open-cavity, formed leads, earless
Pinout Diagram
(top view)
Peak
G1
Main
G2
D2
D1
Pin
D1
D2
G1
G2
S (flange)
Description
Peak Device Drain
Main Device Drain
Peak Device Gate
Main Device Gate
Source
h - x x2 4 8 - h g f- 4 _ D_ p d - a _ 3 - 2 8 - 1 3
S (flange)
Lead connections for PTAB182002TC
Data Sheet
2 of 8
Rev. 04, 2014-07-01
PTAB182002TC
Typical Performance
(data taken in a production Doherty test fixture)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 500 mA, V
GS
= 1.2 V,
ƒ = 1805 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 500 mA, V
GS
= 1.2 V,
ƒ = 1842 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
-5
60
-5
60
50
40
30
IMD (dBc), ACPR (dBc)
IMD (dBc), ACPR (dBc)
Drain Efficiency(%)
-25
-35
-45
-55
-65
32
36
40
44
48
IMD Low
IMD Up
ACPR
Efficiency
b182002tc gr7
40
30
20
10
0
52
-25
-35
-45
-55
-65
32
36
40
44
48
IMD Low
IMD Up
ACPR
Efficiency
b182002tc gr8
20
10
0
52
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 500 mA, V
GS
= 1.2 V,
ƒ = 1880 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 500 mA, V
GS
= 1.2 V,
ƒ = 1805, 1842, 1880 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
1805 MHz
1842 MHz
1880 MHz
-5
60
50
40
30
-10
IMD (dBc), ACPR (dBc)
-35
-45
-55
-65
32
36
40
44
48
IMD Low
IMD Up
ACPR
Efficiency
b182002tc gr9
20
10
0
52
IMD (dBc)
-25
Drain Efficiency(%)
-15
-20
-30
IMD Up
IMD Low
-40
32
36
40
44
48
b182002tc gr10
52
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 8
Rev. 04, 2014-07-01
Drain Efficiency(%)
-15
50
-15
PTAB182002TC
Typical Performance
(cont.)
CW Performance
V
DD
= 28 V, I
DQ
= 500 mA,
ƒ = 1805, 1842, 1880 MHz,
25
60
25
CW Performance
at selected V
DD
I
DQ
= 500 mA, ƒ = 1805 MHz
60
Efficiency
20
50
Efficiency
Drain Efficiency(%)
20
50
40
Gain
15
1805 MHz
1842 MHz
1880 MHz
b182002tc gr11
15
10
5
0
35
40
45
50
40
Gain
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
b182002tc gr12
30
20
10
10
30
5
35
40
45
50
20
55
55
Output Power (dBm)
Output Power (dBm)
CW Performance
at selected V
DD
I
DQ
= 500 mA, ƒ = 1842 MHz
25
60
25
CW Performance
at selected V
DD
I
DQ
= 500 mA, ƒ = 1880 MHz
60
Efficiency
20
50
20
Efficiency
50
40
Efficiency (%)
15
40
15
Gain
10
5
0
35
40
45
50
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
b182002tc gr13
Gain
10
5
0
35
40
45
50
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
b182002tc gr14
30
20
10
30
20
10
55
55
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 8
Rev. 04, 2014-07-01
Efficiency (%)
Gain (dB)
Gain (dB)
Efficiency (%)
Gain (dB)
Gain (dB)
PTAB182002TC
Typical Performance
(cont.)
Small Signal CW
Gain & Input Return Loss (single side)
V
DD
= 28 V, I
DQ
= 500 mA
25
20
0
Power Gain (dB)
Gain
15
-10
10
-15
5
IRL
0
-5
1550
b182002tc gr15
-20
-25
2150
1650
1750
1850
1950
2050
Frequency (MHz)
Load Pull Performance
Z Source
D
S
Input Return Loss (dB)
-5
Z Load
G
G
D
Main Side Load Pull Performance
– Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 530 mA
P
1dB
Max Output Power
Freq
[MHz]
1805
1842
1880
Z Source
[Ω]
5.6 – j6.1
12.4 – j12.7
15.1 – j14.5
Z Load
[Ω]
2.3 – j9.4
2.1 – j9.4
2.1 – j9.8
Gain
[dB]
16.4
15.9
16.2
P
OUT
[dBm]
49.89
50.03
50.06
P
OUT
[W]
97
101
101
PAE
[%]
54.4
53.6
54.7
Z Load
[Ω]
6.6 – j9.5
5.4 – j8.6
5.0 – j9.0
Gain
[dB]
18.9
18.7
18.8
Max PAE
P
OUT
[dBm]
48.16
48.21
48.34
P
OUT
[W]
65
66
68
PAE
[%]
65.0
66.0
68.0
Peak Side Load Pull Performance
– Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 850 mA
P
1dB
Max Output Power
Freq
[MHz]
1805
1842
1880
Z Source
[Ω]
7.5 – j8.9
6.7 – j5.2
5.5 – j6.8
Z Load
[Ω]
1.5 – j9.3
1.2 – j9.2
1.4 – j9.7
Gain
[dB]
18.2
18.2
18.7
P
OUT
[dBm]
51.47
51.68
51.35
P
OUT
[W]
140
147
136
PAE
[%]
52.8
53.1
54.0
Z Load
[Ω]
2.4 – j8.3
2.4 – j8.3
2.4 – j8.3
Gain
[dB]
20.1
20.3
20.5
Max PAE
P
OUT
[dBm]
50.17
50.09
49.95
P
OUT
[W]
104
102
99
PAE
[%]
62.5
62.9
62.2
Data Sheet
5 of 8
Rev. 04, 2014-07-01
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