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BZG05B43-M3-18

产品描述DIODE ZENER 43V 1.25W DO214AC
产品类别半导体    分立半导体   
文件大小95KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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BZG05B43-M3-18概述

DIODE ZENER 43V 1.25W DO214AC

BZG05B43-M3-18规格参数

参数名称属性值
电压 - 齐纳(标称值)(Vz)43V
容差±2%
功率 - 最大值1.25W
阻抗(最大值)(Zzt)50 Ohms
不同 Vr 时的电流 - 反向漏电流500nA @ 33V
不同 If 时的电压 - 正向(Vf1.2V @ 200mA
工作温度150°C(TJ)
安装类型表面贴装
封装/外壳DO-214AC,SMA
供应商器件封装DO-214AC(SMA)

文档预览

下载PDF文档
BZG05B-M-Series
www.vishay.com
Vishay Semiconductors
Zener Diodes
FEATURES
• High reliability
• Voltage range includes 37 breakdown
voltages from 3.3 V to 100 V with ± 2 % for
BZG05B-M-series
• Fits onto 5 mm SMD footpads
SMA
(DO-214AC)
• Wave and reflow solderable
• AEC-Q101 qualified available
• Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
UNIT
V
mA
V
V
W
°C
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
BR
V
WM
P
PPM
T
J
max.
V
Z
specification
Circuit configuration
Polarity
VALUE
3.3 to 100
2.7 to 80
5.49 to 98
4.7 to 90
40
150
Pulse current
Single
Uni-directional
• Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZG05B-M-series
BZG05B-M-series
BZG05B-M-series
BZG05B-M-series
ORDERING CODE
BZG05Bxxx-M3-08
BZG05Bxxx-M3-18
BZG05Bxxx-HM3-08
BZG05Bxxx-HM3-18
TAPED UNITS PER REEL
1500 per 7" reel
6000 per 13" reel
1500 per 7" reel
6000 per 13" reel
MINIMUM ORDER QUANTITY
6000/box
6000/box
6000/box
6000/box
PACKAGE
PACKAGE NAME
SMA (DO-214AC)
WEIGHT
73 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power dissipation
Junction to lead
Mounted on epoxy-glass hard tissue, fig. 1a
Junction to ambient air
Mounted on epoxy-glass hard tissue, fig. 1b
Mounted on Al-oxide-ceramic (Al
2
O
3
), fig. 1b
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 0.2 A
TEST CONDITION
R
thJA
< 30 K/W, T
amb
= 60 °C
R
thJA
< 100 K/W, T
amb
= 25 °C
t
p
= 100 μs sq. pulse, T
j
= 25 °C prior to surge
SYMBOL
P
tot
P
tot
P
ZSM
R
thJL
R
thJA
R
thJA
R
thJA
T
j
T
stg
V
F
VALUE
3000
1250
60
30
150
125
100
150
-65 to +150
1.2
UNIT
mW
mW
W
K/W
K/W
K/W
K/W
°C
°C
V
Rev. 1.0, 13-Oct-17
Document Number: 86136
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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