VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, New Generation 3,
D-61 Package, 2 x 40 A
VS-80CNQ...APbF
Base
common
cathode
FEATURES
• 150 °C T
J
operation
• Center tap module
• Very low forward voltage drop
1
Anode
1
2
Common
cathode
3
Anode
2
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
D-61-8
VS-80CNQ...ASMPbF
1
Anode
1
2
Common
cathode
3
Anode
2
• New fully transfer-mould low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D-61-8-SM
VS-80CNQ...ASLPbF
Base
common
cathode
DESCRIPTION
1
Anode
1
3
Anode
2
D-61-8-SL
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D-61
2 x 40 A
35 V, 40 V, 45 V
0.51 V
250 mA at 125 °C
150 °C
Common cathode
54 mJ
The center tap Schottky rectifier module series has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
40 A
pk
, T
J
= 125 °C (per leg)
Range
VALUES
80
35 to 45
5800
0.47
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-80CNQ035APbF
35
VS-80CNQ040APbF
40
VS-80CNQ045APbF
45
UNITS
V
Revision: 09-Dec-14
Document Number: 94255
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 114 °C, rectangular waveform
80
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
5800
750
54
8
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
40
UNITS
T
J
= 25 °C, I
AS
= 8 A, L = 1.7 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
40 A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
80 A
40 A
80 A
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.52
0.66
0.47
0.61
5
250
0.26
3.93
2600
5.5
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum
Case style D-61
per leg
per package
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation (see fig. 4)
DC operation
Mounting surface, smooth and greased
Device flatness < 5 mils
TEST CONDITIONS
VALUES
-55 to +150
0.85
0.42
0.30
7.8
0.28
40 (35)
58 (50)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
80CNQ035A
80CNQ040A
80CNQ045A
80CNQ035ASM
Marking device
Case style D-61-8-SM
80CNQ040ASM
80CNQ045ASM
80CNQ035ASL
Case style D-61-8-SL
80CNQ040ASL
80CNQ045ASL
Revision: 09-Dec-14
Document Number: 94255
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
1000
1000
T
J
= 150 °C
I
R
- Reverse Current (mA)
I
F
- Instantaneous
Forward Current (A)
100
T
J
= 125 °C
10
100
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 09-Dec-14
Document Number: 94255
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
Vishay Semiconductors
30
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Allowable Case Temperature (°C)
160
140
DC
Average Power Loss (W)
25
20
15
10
5
0
RMS limit
120
Square wave (D = 0.50)
80 % rated V
R
applied
100
DC
See note (1)
80
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
Revision: 09-Dec-14
Document Number: 94255
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
80
2
C
3
N
4
Q
5
045
6
A
7
PbF
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (80 A)
Circuit configuration:
C = common cathode
Package:
N = D-61
Schottky “Q” series
Voltage ratings
Package style:
A = D-61-8
ASM = D-61-8-SM
ASL = D-61-8-SL
2
3
4
5
6
7
035 = 35 V
040 = 40 V
045 = 45 V
8
-
None = standard production
PbF = lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-80CNQ035PBF
VS-80CNQ035ASLPBF
VS-80CNQ035ASMPBF
VS-80CNQ040APBF
VS-80CNQ040ASLPBF
VS-80CNQ040ASMPBF
VS-80CNQ035APBF
VS-80CNQ035ASLPBF
VS-80CNQ035ASMPBF
QUANTITY PER REEL
10
20
20
10
20
20
10
20
20
MINIMUM ORDER QUANTITY
200
400
400
200
400
400
200
400
400
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95354
www.vishay.com/doc?95356
Revision: 09-Dec-14
Document Number: 94255
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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