Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
E
CB
High Current Transistor
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation at T
a
=25ºC
Derate Above 25ºC
Total Device Dissipation at T
a
=25ºC
Total Device Dissipation at T
c
=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Junction to Ambient
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
**P
D
P
D
T
j
, T
stg
BC635
BC636
45
45
BC637
BC638
60
60
5.0
1.0
800
6.4
1.0
2.75
22
- 55 to +150
BC639
BC640
80
80
UNIT
V
V
V
A
mW
mW/ºC
W
W
mW/ºC
ºC
R
th (j-c)
R
th (j-a)
**R
th (j-a)
45
156
125
ºC/W
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
V
CEO
I
C
=1mA, I
B
=0
Collector Emitter Voltage
BC635/BC636
BC637/BC638
BC639/BC640
V
CBO
I
C
=100µA, I
E
=0
Collector Base Voltage
BC635/BC636
BC637/BC638
BC639/BC640
V
EBO
I
E
=10µA, I
C
=0
Emitter Base Voltage
I
CBO
V
CB
=30V, I
E
=0
Collector Cut Off Current
V
CB
=30V, I
E
=0, T
a
=125ºC
*V
BE (on)
I
C
=500mA, V
CE
=2V
Base Emitter (On) Voltage
Collector Emitter Saturation Voltage
*V
CE (sat)
I
C
=500mA, I
B
=50mA
MIN
45
60
80
45
60
80
5.0
MAX
UNIT
V
V
V
V
V
V
V
µA
µA
V
V
0.1
10
1.0
0.5
*Pulse Test: Pulse Width < 300µs, Duty Cycle 2%
µ
**Transistors mounted on printed circuit board, max Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm
BC635_BC640Rev_5 180712E
Continental Device India Limited
Data Sheet
Page 1 of 5
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
E
CB
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
*h
FE
V
CE
=2V, I
C
=5mA
DC Current Gain
V
CE
=2V, I
C
=150mA
BC635/BC636
BC637/BC638
BC639/BC640
Group-10
Group-16
V
CE
=2V, I
C
=500mA
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transistors Frequency
SYMBOL
TEST CONDITION
f
T
I
C
=50mA, V
CE
=2V, f=100MHz
NPN
PNP
C
ob
I
E
=0, V
CB
=10V, f=1MHz
NPN
PNP
C
ib
V
BE
=0.5V, f=1MHz
NPN
PNP
MIN
25
MAX
UNIT
40
40
40
40
100
25
250
250
250
160
250
TYP
200
150
7
9
50
110
UNIT
MHz
MHz
pF
pF
pF
pF
Output Capacitance
Input Capacitance
*Pulse Test: Pulse Width < 300µs, Duty Cycle 2%
µ
BC635_BC640Rev_5 180712E
Continental Device India Limited
Data Sheet
Page 2 of 5
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
TO-92 Leaded Plastic Package
Pin 1: Cathode
Pin 3: Anode
DIM
Min
A
4.32
B
4.45
C
3.18
D
0.40
E
0.30
F
All Dimensions are in mm
Max
5.33
5.20
4.19
0.55
0.55
5º
DIM
G
H
K
L
M
Min
1.14
1.20
12.5
1.982
1.03
Max
1.40
1.80
2.082
1.53
Pin 1
Pin 2
Pin 3
Base
Collector
Emitter
BC635_BC640Rev_5 180712E
Continental Device India Limited
Data Sheet
2N5551
Page 3 of 5
TO-92
Plastic Package
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
TO-92 Tape and Ammo Packaging
All Dimensions are in mm
Tape Specifications
All Dimensions are in mm
BC635_BC640Rev_5 180712E
Continental Device India Limited
Data Sheet
Page 4 of 5
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN
BC636, 638, 640 PNP
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
Packaging Information
T & A: Tape and Ammo Pack; T & R: Tape and Red; Bulk: Loose in Poly bags; Tube: Tube and Ammo Pack; k: 1.000
Package/Case
Type
TO-92
Std. Packing
Packaging Type
Bulk
T&A
Qty
1,000
2,000
Qty
5K
2K
Inner Carton
Size L x W x H Gross Weight
Qty
(cm)
(Kg)
19x19x8
1.10
80K
32x4.5x20
0.70
40K
Outer Carton
Size L x W x H Gross Weight
(cm)
(Kg)
43x40x35
20.0
43x40x35
15.20
Component Disposal Instructions
1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please dispose
as per prevailing Environmental Legislation of their Country.
2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE).
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in
your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the
Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and on the CDIL Web Site/CD
are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information.
Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey
any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or
systems. CDIL customers selling these products (either as individual Semiconductor Devices or incorporated in their end products), in any
life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages
resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products
without prior notice.
BC635_640Rev_5 180712E
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119
email@cdil.com
www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 5 of 5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
