NLU1G86
Single 2-Input Exclusive OR
Gate
The NLU1G86 MiniGatet is an advanced high−speed CMOS
2−input Exclusive OR gate in ultra−small footprint.
The NLU1G86 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
www.onsemi.com
MARKING
DIAGRAMS
UDFN6
1.0 x 1.0
CASE 517BX
1
UDFN6
1.2 x 1.0
CASE 517AA
1
IN B
1
6
V
CC
1
IN A
2
5
NC
4
M
= Device Marking
= Date Code
UDFN6
1.45 x 1.0
CASE 517AQ
XM
XM
•
•
•
•
•
•
•
High Speed: t
PD
= 3.5 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These are Pb−Free Devices
XM
GND
3
4
OUT Y
ORDERING INFORMATION
Figure 1. Pinout
(Top View)
IN A
IN B
=1
OUT Y
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Figure 2. Logic Symbol
PIN ASSIGNMENT
1
2
3
4
5
6
IN B
IN A
GND
OUT Y
NC
V
CC
FUNCTION TABLE
Input
A
L
L
H
H
B
L
H
L
H
Output
Y
L
H
H
L
©
Semiconductor Components Industries, LLC, 2016
August, 2016
−
Rev. 3
1
Publication Order Number:
NLU1G86/D
NLU1G86
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5
to +7.0
−0.5
to +7.0
−0.5
to +7.0
−20
±20
±12.5
±25
±25
−65
to +150
260
150
Level 1
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
±500
V
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5)
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Parameter
Min
1.65
0
0
−55
0
0
Max
5.5
5.5
5.5
+125
100
20
Unit
V
V
V
°C
ns/V
www.onsemi.com
2
NLU1G86
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
1.65
2.3 to
5.5
V
IL
Low−Level
Input Voltage
1.65
2.3 to
5.5
V
OH
High−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OH
=
−50
mA
V
IN
= V
IH
or V
IL
I
OH
=
−4
mA
I
OH
=
−8
mA
V
OL
Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
IN
I
CC
Input Leakage
Current
Quiescent
Supply Current
0
v
V
IN
v
5.5 V
0
v
V
IN
v
V
CC
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
1.9
2.9
4.4
2.58
3.94
0
0
0
0.1
0.1
0.1
0.36
0.36
±0.1
1.0
2.0
3.0
4.5
T
A
= 25
5C
Min
0.75 x
V
CC
0.70 x
V
CC
0.25 x
V
CC
0.30 x
V
CC
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±1.0
10
Typ
Max
T
A
=
+855C
Min
0.75 x
V
CC
0.70 x
V
CC
0.25 x
V
CC
0.30 x
V
CC
1.9
2.9
4.4
2.34
3.66
0.1
0.1
0.1
0.52
0.52
±1.0
40
mA
mA
V
0.25 x
V
CC
0.30 x
V
CC
V
V
Max
T
A
=
−555C
to
+1255C
Min
Max
Unit
V
Symbol
V
IH
Parameter
Low−Level
Input Voltage
Conditions
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 nS)
V
CC
(V)
3.0 to
3.6
4.5 to
5.5
T
A
= 25
5C
Test Condition
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
Min
Typ
4.4
5.7
3.5
4.2
5.5
5.0
10
Max
11
14.5
6.8
8.8
10
T
A
=
+855C
Min
Max
13
16.5
8.0
10
10
T
A
=
−555C
to
+1255C
Min
Max
15.5
19.5
10
12
10
pF
pF
Unit
ns
Symbol
t
PLH
,
t
PHL
Parameter
Propagation
Delay,
Input A or B to
Output Y
C
IN
C
PD
Input
Capacitance
Power
Dissipation
Capacitance
(Note 6)
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
•
V
CC
•
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
•
V
CC2
•
f
in
+ I
CC
•
V
CC.
www.onsemi.com
3
NLU1G86
Input A or B
50%
t
PLH
Output Y
50% V
CC
50% V
CC
GND
t
PHL
V
OH
V
OL
Figure 3. Switching Waveforms
V
CC
INPUT
OUTPUT
C
L*
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for propagation delay tests.
Figure 4. Test Circuit
ORDERING INFORMATION
Device
NLU1G86AMUTCG
NLU1G86MUTCG
NLU1G86CMUTCG
Package
UDFN6, 1.45 x 1.0, 0.5P
(Pb−Free)
UDFN6, 1.2 x 1.0, 0.4P
(Pb−Free)
UDFN6, 1.0 x 1.0, 0.35P
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
4
NLU1G86
PACKAGE DIMENSIONS
UDFN6, 1.2x1.0, 0.4P
CASE 517AA
ISSUE D
EDGE OF PACKAGE
D
A
B
L1
2X
0.10 C
2X
0.10 C
0.10 C
(A3)
A
A1
10X
0.08 C
SIDE VIEW
A1
5X
1
3
SEATING
PLANE
C
L
L2
6X
b
0.10 C A B
0.05 C
NOTE 3
6
4
e
BOTTOM VIEW
www.onsemi.com
5
ÉÉÉ
ÉÉÉ
ÉÉÉ
DETAIL B
Side View
(Optional)
0.40
PITCH
ÉÉ
ÉÉ
PIN ONE
REFERENCE
E
DETAIL A
Bottom View
(Optional)
EXPOSED Cu
MOLD CMPD
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DIM
A
A1
A3
b
D
E
e
L
L1
L2
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.127 REF
0.15
0.25
1.20 BSC
1.00 BSC
0.40 BSC
0.30
0.40
0.00
0.15
0.40
0.50
TOP VIEW
A3
MOUNTING FOOTPRINT*
0.42
6X
0.22
6X
1.07
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
