PD - 91413E
IRLMS5703
HEXFET
®
Power MOSFET
l
l
l
l
Generation V Technology
Micro6 Package Style
Ultra Low Rds(on)
P-Channel MOSFET
D
1
6
A
D
V
DSS
= -30V
D
2
5
D
G
3
4
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
R
DS(on)
= 0.20Ω
T op V iew
M icro 6
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@- 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-2.3
-1.9
-13
1.7
13
± 20
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Min.
–––
Typ.
–––
Max
75
Units
°C/W
4/7/04
IRLMS5703
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-30
–––
–––
–––
-1.0
1.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.01
–––
–––
–––
–––
–––
–––
–––
–––
7.2
1.4
2.3
10
12
20
8.4
170
89
44
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.20
V
GS
= -10V, I
D
= -1.6A
Ω
0.40
V
GS
= -4.5V, I
D
= -0.80A
–––
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -0.80A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= -20V
nA
-100
V
GS
= 20V
11
I
D
= -1.6A
2.1
nC
V
DS
= -24V
3.4
V
GS
= -10V, See Fig. 6 and 9
–––
V
DD
= -15V
–––
I
D
= -1.6A
ns
–––
R
G
= 6.2Ω
–––
R
D
= 9.2Ω, See Fig. 10
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
29
27
-1.7
A
-13
-1.2
44
41
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.6A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
5sec.
I
SD
≤
-1.6A, di/dt
≤
-140A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
IRLMS5703
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
100
-I D , D ra in -to -S o u rc e C u rre n t (A )
10
-I D , D ra in -to -S o u rce C u rre n t (A )
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
10
1
1
-3 .0V
-3.0 V
0.1
0.1
1
20 µs P U LSE W IDTH
T
J
= 25 °C
A
10
0.1
0.1
1
20 µs P U LSE W IDTH
T
J
= 15 0°C
A
10
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
D S (o n )
, D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I
D
= -1.6A
-I
D
, D rain -to- S our ce C urr ent ( A )
1.5
10
T
J
= 2 5 °C
T
J
= 1 5 0 °C
1.0
1
0.5
0.1
3.0
4.0
5.0
V
DS
= -1 0 V
2 0 µ s P U L S E W ID T H
6.0
7.0
A
8.0
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= -10 V
100 120 140 160
A
-V
G S
, Ga te-to-S o urce V oltage (V )
T
J
, Junction T emperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRLMS5703
350
300
-V
G S
, G a te -to -S o u rce V o lta g e (V )
V
GS
C
is s
C
rs s
C
os s
=
=
=
=
0V ,
f = 1MH z
C
gs
+ C
g d
, C
ds
SH OR TED
C
gd
C
ds
+ C
gd
20
I
D
= -1 .6A
V
DS
= - 24V
V
DS
= - 15V
16
C , C a p a c ita n c e (p F )
250
C
is s
200
12
C
o ss
150
8
100
C
rss
50
4
0
1
10
100
A
0
0
2
4
6
FOR TE ST C IR C U IT
SE E FIG U R E 9
8
10
12
A
-V
D S
, Drain-to-Source V oltage (V)
Q
G
, Total G ate C harge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
S D
, R e ve rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R
D S(o n)
10
-I
D
, D ra in C u rre n t (A )
10
100µ s
T
J
= 1 50° C
T
J
= 25 °C
1
1m s
1
10m s
0.1
0.4
0.6
0.8
1.0
V
G S
= 0 V
1.2
A
0.1
1
T
A
= 25 °C
T
J
= 15 0°C
S ing le Pulse
10
A
100
1.4
-V
S D
, S ource-to-Drain V oltage (V )
-V
D S
, D rain-to-S ource Voltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRLMS5703
V
DS
R
D
Q
G
-10V
Q
GS
V
G
Q
GD
R
G
V
GS
D.U.T.
+
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Charge
Fig 9a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
50KΩ
12V
.2µF
.3µF
V
GS
10%
+
D.U.T.
-
V
DS
V
GS
-3mA
90%
I
G
I
D
V
DS
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
100
D = 0.50
Fig 10b.
Switching Time Waveforms
(Z
thJA
)
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response
P
DM
t
1
t
2
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
V
DD
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