PD- 91411D
IRF7421D1
FETKY
ä
MOSFET / Schottky Diode
l
l
l
l
Co-packaged HEXFET
®
Power
MOSFET and Schottky Diode
Ideal For Synchronous Regulator
Applications
Generation V Technology
SO-8 Footprint
A
S
S
G
1
8
A
A
D
D
D
D
2
7
V
DSS
= 30V
R
DS(on)
= 0.035Ω
Schottky Vf = 0.39V
3
6
4
5
Top View
Description
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@10VÃ
Pulsed Drain Current
À
Power Dissipation
Ã
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Á
Junction and Storage Temperature Range
Maximum
5.8
4.6
46
2.0
1.3
16
± 20
-5.0
-55 to +150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Junction-to-Ambient
Ã
Maximum
62.5
Units
°C/W
Notes:
À
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
Á
I
SD
≤
4.1A, di/dt
≤
110A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Â
Pulse width
≤
300µs; duty cycle
≤
2%
Ã
Surface mounted on FR-4 board, t
≤
10sec.
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1
10/18/04
IRF7421D1
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
—
—
1.0
4.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.026
0.040
—
—
—
—
—
—
18
2.2
5.9
6.7
27
20
16
510
200
84
Max. Units
Conditions
—
V
V
GS
= 0V, I
D
= 250µA
0.035
V
GS
= 10V, I
D
= 4.1A
Ω
0.060
V
GS
= 4.5V, I
D
= 2.1A
—
V
V
DS
= V
GS
, I
D
= 250µA
—
S
V
DS
= 15V, I
D
= 2.1A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
27
I
D
= 4.1A
3.3
nC V
DS
= 24V
8.9
V
GS
= 10V (see figure 10)
Â
—
V
DD
= 15V
—
I
D
= 4.1A
ns
—
R
G
= 6.2Ω
—
R
D
= 3.7Ω
Â
—
V
GS
= 0V
—
pF V
DS
= 25V
—
ƒ = 1.0MHz (see figure 9)
Conditions
2
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current (Body Diode) —
—
3.1
A
I
SM
Pulsed Source Current (Body Diode)
—
—
33
V
SD
Body Diode Forward Voltage
—
—
1.0
V
t
rr
Reverse Recovery Time (Body Diode) — 57
86
ns
Q
rr
Reverse Recovery Charge
— 93
140
nC
T
J
= 25°C, I
S
= 4.1A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.1A
di/dt = 100A/µs
Â
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
1.7
A
1.2
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
T
A
= 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
Schottky Diode Electrical Specifications
V
FM
Parameter
Max. Forward voltage drop
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
110 pF
3600 V/ µs
Conditions
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 30V T
J
= 25°C
T
J
= 125°C
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Rated V
R
I
RM
C
t
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
2
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2
Power Mosfet Characteristics
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
IRF7421D1
100
I D , Drain-to-Source Current (A)
10
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
3.0V
3.0V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
V DS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
10
T
J
= 150°C
I
SD
, Reverse Drain Current (A)
10
T
J
= 150°C
T
J
= 25°C
1
3.0
3.5
4.0
4.5
V
DS
= 10V
20µs PULSE WIDTH
5.0
5.5
6.0
A
1
0.4
0.8
1.2
1.6
V
GS
= 0V
2.0
A
2.4
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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IRF7421D1
Power Mosfet Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 4.1A
1.5
R
DS
(on) , Drain-to-Source On Resistance (Ω)
2.0
0.2
VGS = 4.5V
0.1
1.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
VGS =10V
0.0
0
5
10
I
100 120 140 160
A
15
20
25
30
35
A
T
J
, Junction Temperature (°C)
,
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.07
100
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.06
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
0.05
I
D
, Drain Current (A)
10
100µs
0.04
I
= 5.8A
1ms
0.03
1
10ms
0.02
0.01
3
6
9
12
15
A
0.1
T
A
= 25°C
T
J
= 150°C
Single Pulse
0.1
1
10
A
100
V
/5
, Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig 8.
Maximum Safe Operating Area
4
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IRF7421D1
Power Mosfet Characteristics
1000
800
C, Capacitance (pF)
C
iss
600
C
oss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 4.1A
V
DS
= 24V
V
DS
= 15V
16
12
400
8
C
rss
200
4
0
1
10
100
A
0
0
5
10
15
FOR TEST CIRCUIT
SEE FIGURE 9
20
25
30
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
P
DM
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 9.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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