PD - 91503D
IRFP150N
HEXFET
®
Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 100V
Ω
R
DS(on)
= 0.036W
G
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
I
D
= 42A
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
42
30
140
160
1.1
± 20
420
22
16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
www.irf.com
Typ.
–––
0.24
–––
Max.
0.95
–––
40
Units
°C/W
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
1
07/15/02
IRFP150N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
56
45
40
5.0
13
1900
450
230
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.036
Ω
V
GS
= 10V, I
D
= 23A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 22A
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
110
I
D
= 22A
15
nC V
DS
= 80V
58
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 50V
–––
I
D
= 22A
ns
–––
R
G
= 3.6W
Ω
–––
R
D
= 2.9W See Fig. 10
,
Ω
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
42
––– –––
showing the
A
G
integral reverse
––– ––– 140
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
=23A, V
GS
= 0V
––– 180 270
ns
T
J
= 25°C, I
F
= 22A
––– 1.2 1.8
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses
IRF1310N data and test conditions
Uses
IRF1310N data and test conditions.
Starting T
J
= 25°C, L = 1.7mH
Ω
R
G
= 25W , I
AS
= 22A. (See Figure 12)
I
SD
≤
22A, di/dt
≤
180A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
2
www.irf.com
IRFP150N
1000
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
10
10
4.5V
4.5V
20us PULSE WIDTH
T
J
= 25
o
C
1
10
100
1
0.1
1
0.1
20us PULSE WIDTH
T
J
= 175
o
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 36A
I
D
, Drain-to-Source Current (A)
2.5
100
T
J
= 25
o
C
T
J
= 175
o
C
2.0
1.5
10
1.0
0.5
1
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
o
C)
Fig 3.
Typical Transfer Characteristics
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRFP150N
3500
3000
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
20
I
D
= 22A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
C, Capacitance (pF)
2500
C
iss
2000
12
1500
8
1000
C
oss
C
rss
4
500
0
1
10
100
0
0
20
40
60
FOR TEST CIRCUIT
SEE FIGURE 13
80
100
120
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
100
10us
10
100us
10
1ms
1
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
1
T
C
= 25
o
C
T
J
= 175
o
C
Single Pulse
10
10ms
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
www.irf.com
IRFP150N
50
V
DS
40
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
30
10V
20
Pulse Width
£1
µs
Duty Factor
£ 0.1 %
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
