PD - 9.1714
PRELIMINARY
IRFZ44ES/L
HEXFET
®
Power MOSFET
D
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRFZ44ES)
Low-profile through-hole (IRFZ44EL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
V
DSS
= 60V
R
DS(on)
= 0.023Ω
G
S
I
D
= 48A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44EL) is available for low-profile applications.
D 2 Pak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
48
34
192
110
0.71
± 20
220
29
11
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
°C/W
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1
11/18/97
IRFZ44ES/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
DV
(BR)DSS
/DT
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
60
–––
–––
2.0
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.063
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
60
70
70
7.5
1360
420
160
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.023
Ω
V
GS
= 10V, I
D
= 29A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 30V, I
D
= 29A
25
V
DS
= 60V, V
GS
= 0V
µA
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
60
I
D
= 29A
13
nC V
DS
= 48V
23
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 30V
–––
I
D
= 29A
ns
–––
R
G
= 15Ω
–––
R
D
= 1.1Ω, See Fig. 10
Between lead,
––– nH
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
48
––– –––
showing the
A
G
integral reverse
––– ––– 192
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 29A, V
GS
= 0V
––– 69 104
ns
T
J
= 25°C, I
F
= 29A
––– 177 266
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRFZ44E data and test conditions
Starting T
J
= 25°C, L = 520µH
R
G
= 25Ω, I
AS
= 29A. (See Figure 12)
I
≤
29A, di/dt
≤
320A/µs, V
DD
≤
V
(BR)DSS
,
SD
T
J
≤
175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
2
www.irf.com
IRFZ44ES/L
1000
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
10
4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
1
20µs PULSE WIDTH
T
J
= 175
°
C
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 48A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 175
°
C
100
1.5
1.0
10
0.5
1
4
5
6
7
V DS = 25V
20µs PULSE WIDTH
8
9
10
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFZ44ES/L
2500
V
GS
, Gate-to-Source Voltage (V)
2000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 29
V
DS
= 48V
V
DS
= 30V
16
C, Capacitance (pF)
Ciss
1500
12
Coss
1000
8
500
Crss
4
0
1
10
100
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
T = 175
°
C
J
100
10us
100us
10
10
T
J
= 25
°
C
1ms
1
0.5
V
GS
= 0 V
1.0
1.5
2.0
2.5
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
10ms
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
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IRFZ44ES/L
R
D
50
50
V
DS
V
GS
D.U.T.
+
V
DD
I
D
, Drain Current (A)
I
D
, Drain Current (A)
40
40
R
G
-
30
30
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
20
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10
10
0
0
25
25
50
50
T
C
, Case Temperature ( C)
T
C
, Case Temperature ( ° C)
75
75
100
100
125
125
150
150
°
175
175
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.1
0.05
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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