PD - 9.1329B
IRLIZ34N
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.035Ω
I
D
= 22A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
22
15
110
37
0.24
±16
110
16
3.7
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
––––
Max.
4.1
65
Units
°C/W
8/25/97
IRLIZ34N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
Min.
55
–––
–––
–––
–––
1.0
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.065
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.9
100
29
21
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.035
V
GS
= 10V, I
D
= 12A
0.046
Ω
V
GS
= 5.0V, I
D
= 12A
0.060
V
GS
= 4.0V, I
D
= 10A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 16A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
25
I
D
= 16A
5.2
nC V
DS
= 44V
14
V
GS
= 5.0V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 16A
ns
–––
R
G
= 6.5Ω, V
GS
= 5.0V
–––
R
D
= 1.8Ω, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
7.5 –––
and center of die contact
880 –––
V
GS
= 0V
220 –––
pF
V
DS
= 25V
94 –––
ƒ = 1.0MHz, See Fig. 5
12 –––
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A
di/dt = 100A/µs
D
G
S
Source-Drain Ratings and Characteristics
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
76
190
22
A
110
1.3
110
290
V
ns
nC
I
S
I
SM
D
G
S
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 610µH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
I
SD
≤
16A, di/dt
≤
270A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
t=60s, ƒ=60Hz
Uses IRLZ34N data and test conditions
IRLIZ34N
10000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.0V
TOP
10000
I
D
, D ra in -to -S o u rc e C u rre n t (A )
I
D
, D ra in -to -S o u rc e C u rre n t (A )
1000
1000
100
100
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
TOP
10
10
1
1
2 .0V
0.1
0.1
0.01
2.0 V
2 0µ s PU LS E W ID TH
T
J
= 2 5°C
A
0.1
1
10
100
0.01
0.001
0.001
0.1
1
2 0µ s PU L SE W ID TH
T
J
= 1 75 °C
10
100
A
V
D S
, Drain-to-Source V oltage (V)
V
D S
, Drain-to-S ource Voltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
T
J
= 2 5 °C
100
R
D S (o n )
, D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I
D
= 27 A
I
D
, D r ain- to-S ourc e C urre nt (A )
2.5
T
J
= 1 7 5 ° C
10
2.0
1.5
1
1.0
0.1
0.5
0.01
2
3
4
5
6
V
DS
= 2 5 V
2 0µ s PU L SE W ID TH
7
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, G ate-to -S ource V olta ge (V )
T
J
, Junction T emperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRLIZ34N
1400
15
V
G S
, G a te -to -S o u rce V o lta g e (V )
1200
V
GS
C
iss
C
rs s
C
iss C
oss
= 0 V,
f = 1 MH z
= C
gs
+ C
gd
, C
d s
SH O R TED
= C
gd
= C
ds
+ C
gd
I
D
= 1 6A
V
D S
= 44 V
V
D S
= 28 V
12
C , C a p a cita n c e (p F )
1000
800
9
C
os s
600
6
400
C
rs s
200
3
0
1
10
100
A
0
0
4
8
12
16
FOR TE ST C IR CU IT
SE E FIG U RE 13
20
24
28
32
A
V
D S
, Drain-to-Source Voltage (V )
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R
D S(o n)
I
D
, D ra in C u rre n t (A )
100
100
10µ s
T
J
= 17 5°C
T
J
= 2 5°C
10
1 00µs
10
1m s
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
G S
= 0 V
1.8
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le Pulse
10
10m s
A
100
2.0
V
S D
, S ource-to-Drain Voltage (V )
V
D S
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRLIZ34N
25
V
DS
20
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
15
5.0V
10
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
5
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
Thermal Response
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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