PD - 9.1306A
IRFIZ46N
HEXFET
®
Power MOSFET
l
l
l
l
l
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.020Ω
I
D
= 33A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
33
23
180
45
0.3
±20
230
16
4.5
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
––––
Max.
3.3
65
Units
°C/W
8/25/97
IRFIZ46N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.017 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.020
Ω
V
GS
= 10V, I
D
= 19A
––– 4.0
V
V
DS
= V
GS
, I
D
= 250µA
––– –––
S
V
DS
= 25V, I
D
= 28A
––– 25
V
DS
= 55V, V
GS
= 0V
µA
––– 250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
––– 61
I
D
= 28A
––– 13
nC
V
DS
= 44V
––– 24
V
GS
= 10V, See Fig. 6 and 13
12 –––
V
DD
= 28V
80 –––
I
D
= 28A
ns
43 –––
R
G
= 12Ω
52 –––
R
D
= 0.98Ω, See Fig. 10
Between lead,
–––
4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
–––
–––
and center of die contact
––– 1500 –––
V
GS
= 0V
––– 450 –––
V
DS
= 25V
pF
––– 160 –––
ƒ = 1.0MHz, See Fig. 5
–––
12 –––
ƒ = 1.0MHz
Min.
55
–––
–––
2.0
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
D
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
72
210
33
A
180
1.3
110
310
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 19A, V
GS
= 0V
T
J
= 25°C, I
F
= 28A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 410µH
R
G
= 25Ω, I
AS
= 28A. (See Figure 12)
I
SD
≤
28A, di/dt
≤
240A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRFZ46N data and test conditions
t=60s, ƒ=60Hz
IRFIZ46N
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
1000
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
100
100
10
10
4 .5V
4.5 V
1
0.1
1
2 0µ s PU LSE W ID TH
T
J
T
C
= 2 5°C
10
A
1
0.1
1
20 µs P UL SE W IDTH
T
T
J
= 17 5°C
C
10
100
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , Drain-to-Source V oltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
D S (o n )
, D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I
D
= 2 8A
I
D
, D r ain- to-S ourc e C urre nt (A )
2.0
100
T
J
= 2 5 ° C
T
J
= 1 7 5 ° C
1.5
1.0
10
0.5
1
4
5
6
7
V
DS
= 2 5 V
2 0 µ s P U L SE W ID TH
8
9
10
A
0.0
-60
-40 -20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, Ga te-to-S o urce V oltage (V )
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFIZ46N
2800
2400
C , C a p a c ita n c e (p F )
2000
C
is s
1600
C
os s
1200
V
G S
, G a te -to -S o u rc e V o lta g e (V )
V
GS
C
is s
C
rs s
C
o ss
= 0 V,
f = 1M H z
= C
gs
+ C
gd
, C
ds
SH O RTE D
= C
gd
= C
ds
+ C
g d
20
I
D
= 2 8A
V
DS
= 4 4V
V
DS
= 2 8V
16
12
8
800
C
rs s
400
4
0
1
10
100
A
0
0
10
20
30
FO R TES T C IR CU IT
SEE FIG U R E 13
40
50
60
A
V
D S
, Drain-to-Source V oltage (V)
Q
G
, Total Gate Charge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
I
S D
, R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R
D S(o n)
I
D
, D ra in C u rre n t (A )
100
100
1 0µs
T
J
= 17 5°C
T
J
= 25 °C
10
1 00µs
10
1m s
1
0.4
0.8
1.2
1.6
V
G S
= 0 V
2.0
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le Pulse
10
10m s
A
100
2.4
V
S D
, S ource-to-Drain Voltage (V )
V
D S
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFIZ46N
35
V
DS
V
GS
R
D
30
D.U.T.
+
R
G
I
D
, Drain Current (A)
-
V
DD
25
10V
20
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
15
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10
5
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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