June 1996
NDP7060L / NDB7060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
75A, 60V. R
DS(ON)
= 0.015
Ω
@ V
GS
= 5V
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP7060L
60
60
± 20
± 40
75
225
150
1
-65 to 175
NDB7060L
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
A
P
D
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
T
J
,T
STG
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
NDP7060L Rev. B2 / NDB7060L Rev. C
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
I
D(on)
g
FS
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche Current
V
DD
= 25 V, I
D
= 75 A
550
75
mJ
A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 37.5 A
T
J
= 125°C
On-State Drain Current
Forward Transconductance
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 37.5 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
75
15
67
1
0.65
1.3
0.8
0.01
0.016
60
250
1
100
-100
V
µA
mA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
2
1.5
0.015
0.024
A
S
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4200
1100
310
4000
1600
800
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V,
I
D
= 75 A, V
GS
= 5 V
V
DD
= 30 V, I
D
= 75 A,
V
GS
= 5 V, R
GEN
= 10
Ω
R
GS
= 10
Ω
23
460
100
270
86
13
62
40
600
150
400
115
nS
nS
nS
nS
nC
nC
nC
NDP7060L Rev. B2 / NDB7060L Rev. C
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 37.5 A
(Note 1)
T
J
= 125°C
t
rr
I
rr
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
F
= 60A,
dI
F
/dt = 100 A/µs
0.92
0.85
108
4.6
75
225
1.3
1.2
150
10
ns
A
A
A
V
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7060L Rev. B2 / NDB7060L Rev. C
Typical Electrical Characteristics
120
2
V
GS
= 10V
I
D
, DRAIN-SOURCE CURRENT (A)
100
6.0
DRAIN-SOURCE ON-RESISTANCE
4.0
5.0
4.5
3.5
R
DS(on)
, NORMALIZED
1.8
V
GS
= 3.0V
1.6
1.4
1.2
80
3.5
4.0
4.5
5.0
6.0
60
3.0
40
1
0.8
2.5
20
10
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0.6
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
100
120
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
2
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
I
D
= 40A
V
GS
= 10V
R
DS(on)
, NORMALIZED
V
GS
1.8
1.6
1.4
1.2
= 5V
TJ = 125°C
R
DS(ON)
, NORMALIZED
1.5
1.25
1
25°C
1
0.8
0.6
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
100
120
0.75
-55°C
0.5
-50
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
J
150
175
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
80
1 .4
V
GS(th)
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 10V
60
T = -55°C
J
125°C
25°C
V
DS
= V
GS
1 .2
I
D
= 250µA
, DRAIN CURRENT (A)
1
40
0 .8
I
D
20
0 .6
0
0
1
V
GS
2
3
, GATE TO SOURCE VOLTAGE (V)
4
0 .4
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature.
NDP7060L Rev. B2 / NDB7060L Rev. C
Typical Electrical Characteristics
(continued)
1.15
BV
DSS
, NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= 250µA
I , REVERSE DRAIN CURRENT (A)
1.1
80
50
V
GS
= 0V
10
T J = 125°C
1
1.05
25°C
-55°C
1
0.1
0.95
0.01
0.9
-50
S
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
0.001
0.2
0.4
V
SD
0.6
0.8
1
1.2
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
7000
5000
10
Ciss
V
GS
, GATE-SOURCE VOLTAGE (V)
8
I
D
= 75A
V
DS
= 12V
48V
24V
CAPACITANCE (pF)
2000
Coss
1000
6
4
500
300
200
1
f = 1 MHz
V
GS
= 0V
2
Crss
0
2
V
3
DS
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
0
40
80
Q
g
, GATE CHARGE (nC)
120
160
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
t
d(on)
t
on
t
r
90%
t
o f f
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
V
GEN
V
O U T
10%
10%
INVERTED
R
GEN
R
GS
G
90%
V
IN
S
10%
50%
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
NDP7060L Rev. B2 / NDB7060L Rev. C
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