VS-GB150TH120U
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 150 A
FEATURES
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
Dual INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
CES
I
C
at T
C
= 80 °C
V
CE(on)
(typical)
at I
C
= 150 A, T
J
= 25 °C
Speed
Package
Circuit configuration
1200 V
150 A
3.10 V
8 kHz to 30 kHz
Dual INT-A-PAK
Half bridge
• Inductive heating
• Electronic welder
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
RMS isolation voltage
SYMBOL
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
(1)
TEST CONDITIONS
MAX.
1200
± 20
UNITS
V
T
C
= 25 °C
T
C
= 80 °C
t
p
= 1 ms
T
C
= 80 °C
t
p
= 1 ms
T
J
= 150 °C
T
J
= 125 °C
f = 50 Hz, t = 1 min
280
150
300
150
300
1147
10
2500
W
μs
V
A
P
D
T
SC
V
ISOL
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature
IGBT ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter saturation voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
SYMBOL
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
TEST CONDITIONS
T
J
= 25 °C
V
GE
= 15 V, I
C
= 150 A, T
J
= 25 °C
V
GE
= 15 V, I
C
= 150 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 1.5 mA, T
J
= 25 °C
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C
MIN.
1200
-
-
4.4
-
-
TYP.
-
3.10
3.45
5.2
-
-
MAX.
-
3.60
-
6.0
5.0
400
mA
nA
V
UNITS
Revision: 22-Sep-17
Document Number: 94714
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB150TH120U
www.vishay.com
Vishay Semiconductors
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
I
SC
R
g
L
CE
R
CC’+EE’
T
C
= 25 °C
t
p
10 μs, V
GE
= 15 V, T
J
= 25 °C,
V
CC
= 600 V, V
CEM
1200 V
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
V
CC
= 600 V, I
C
= 150 A, R
g
= 6.8
,
V
GE
= ± 15 V, T
J
= 125 °C
V
CC
= 600 V, I
C
= 150 A, R
g
= 6.8
,
V
GE
= ± 15 V, T
J
= 25 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
612
116
546
125
17.7
8.9
609
116
564
148
17.5
11.0
12.7
1.14
0.46
1400
2.4
-
0.32
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
-
A
nH
m
nF
mJ
ns
mJ
ns
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
DIODE ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Forward voltage
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
SYMBOL
V
F
Q
rr
I
rr
E
rec
I
F
= 150 A, V
R
= 600 V,
dI
F
/dt = -1500 A/μs
V
GE
= -15 V
TEST CONDITIONS
I
F
= 100 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.75
1.80
8.2
19.1
85
125
4.2
8.4
MAX.
2.15
-
-
-
-
-
-
-
UNITS
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Storage temperature range
Junction to case
IGBT
Diode
SYMBOL
T
J
T
Stg
R
JC
R
CS
Power terminal screw: M5
Mounting screw: M6
Weight of module
-
TEST CONDITIONS
MIN.
-
-40
-
-
-
TYP.
-
-
-
-
0.035
2.5 to 5.0
3.0 to 6.0
300
-
MAX.
150
125
0.109
0.180
-
Nm
g
K/W
UNITS
°C
°C
Case to sink (conductive grease applied)
Mounting torque
Weight
Revision: 22-Sep-17
Document Number: 94714
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB150TH120U
www.vishay.com
Vishay Semiconductors
60
V
CC
= 600 V
R
g
= 6.8
Ω
V
GE
= ± 15 V
T
J
=
125 °C
Eon
30
20
Eoff
10
0
300
V
GE
= 15 V
250
50
150
100
50
0
0
1
2
3
125 °C
E
on
,E
off
(mJ)
200
25 °C
40
I
C
(A)
4
5
0
50
100
150
200
250
300
V
CE
(V)
I
C
(A)
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 1 - IGBT Typical Output Characteristics
300
V
CE
= 20 V
80
70
60
250
200
V
CC
= 600 V
I
C
= 150 A
V
GE
= ± 15 V
T
J
=
125 °C
E
on
E
on
,E
off
(mJ)
125 °C
50
40
30
I
C
(A)
150
100
50
25 °C
E
off
20
10
0
4
5
6
7
8
9
10
11
0
0
10
20
30
40
50
V
GE
(V)
R
g
(Ω)
Fig. 4 - IGBT Switching Loss vs. R
g
Fig. 2 - IGBT Typical Transfer Characteristics
350
300
250
I
C
, Module
I
C
(A)
200
150
100
50
0
0
300
600
900
1200
1500
R
g
= 6.8
Ω
V
GE
= ± 15 V
T
J
=
125 °C
V
CE
(V)
Fig. 5 - RBSOA
Revision: 22-Sep-17
Document Number: 94714
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB150TH120U
www.vishay.com
Vishay Semiconductors
10
0
10
-1
IGBT
Z
thJC
(K/W)
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
300
250
200
25 °C
12
10
E
rec
8
125 °C
I
F
(A)
E (mJ)
150
100
50
0
0
0.5
1
1.5
6
4
2
0
V
CC
= 600 V
R
g
= 6.8
Ω
V
GE
= - 15 V
T
J
=
125 °C
0
50
100
150
200
250
300
2
2.5
3
V
F
(V)
I
F
(A)
Fig. 8 - Diode Switching Loss vs. I
F
Fig. 7 - Diode Typical Forward Characteristics
12
10
8
E (mJ)
6
4
2
0
0
10
E
rec
V
CC
= 600 V
I
C
= 150 A
V
GE
= - 15 V
T
J
=
125 °C
20
30
40
50
R
g
(Ω)
Fig. 9 - Diode Switching Loss vs. R
g
Revision: 22-Sep-17
Document Number: 94714
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB150TH120U
www.vishay.com
Vishay Semiconductors
10
0
DIODE
10
-1
Z
thJC
(K/W)
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 22-Sep-17
Document Number: 94714
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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