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IFN59

产品描述Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226
产品类别晶体管   
文件大小50KB,共1页
制造商InterFET
官网地址http://www.interfet.com/
下载文档 详细参数 选型对比 全文预览

IFN59概述

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226

IFN59规格参数

参数名称属性值
厂商名称InterFET
包装说明CYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
Is SamacsysN
配置SINGLE
FET 技术JUNCTION
JEDEC-95代码TO-226
JESD-30 代码O-PBCY-T3
元件数量1
端子数量3
工作模式DEPLETION MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)0.1 W
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
D-2
01/99
Japanese Equivalent JFET Types
Silicon Junction Field-Effect Transistors
Japanese
InterFET
Process
Parameters
Conditions
Unit
Limit
2SK17
IFN17
NJ16
N
Channel
2SK40
IFN40
NJ16
N
Channel
2SK59
IFN59
NJ16
N
Channel
2SK105
IFN105
NJ16
N
Channel
BV
GSS
I
GSS
V
GS(off)
I
DSS
g
fs
C
iss
C
rss
I
G
= – 1.0 µA
V
GS
= ( ), V
DS
= Ø
V
DS
= ( ), I
D
= 1.0 nA
V
DS
= ( ), V
GS
= Ø
V
DS
= ( ), V
GS
= Ø
V
GS
= ( ), V
DS
= ( )
V
GS
= ( ), V
DS
= ( )
V
Min
nA
Max
V
Min/Max
mA
Min/Max
mS
Typ
pF
Typ
pF
Typ
– 20
0.10
(–10 V)
– 0.5/– 6.0
(10 V)
0.3/6.5
(10 V)
2.0
(10 V)
4.0
(Ø) (Ø)
1.2
(– 10 V) (Ø)
TO-226AA
SGD
– 50
1.0
(– 30 V)
– 0.4/– 5.0
(15 V)
0.6/6.5
(15 V)
2.0
(15 V)
4.0
(Ø) (15 V)
1.2
(Ø) (15 V)
TO-226AA
SGD
– 30
1.0
(–10 V)
– 0.4/– 5.0
(10 V)
0.3/1.4
(10 V)
1.5
(10 V)
– 50
1.0
(– 30 V)
– 0.25/– 4.5
(5.0 V)
0.5/12
(5.0 V)
2.1
(5.0 V)
4.0
(Ø) (10 V)
1.0
(Ø) (10 V)
Package Configuration
Pin Configuration
TO-226AA
SGD
TO-226AA
DGS
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com

IFN59相似产品对比

IFN59 2SK105 2SK40 2SK59 2SK17 IFN105 P2512H2184BBTB
描述 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226 Fixed Resistor, Thin Film, 2W, 2180000ohm, 300V, 0.1% +/-Tol, 50ppm/Cel, Surface Mount, 2512, CHIP
包装说明 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CHIP
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
端子数量 3 3 3 3 3 3 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 155 °C
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL SMT
表面贴装 NO NO NO NO NO NO YES
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
FET 技术 JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION -
JEDEC-95代码 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 -
JESD-30 代码 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 -
元件数量 1 1 1 1 1 1 -
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND -
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE -
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM -
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON -
Base Number Matches 1 1 1 1 1 1 -

 
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