VS-25ETS..SPbF Series
www.vishay.com
Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 25 A
FEATURES
Base
cathode
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
• Designed and qualified
JEDEC
®
-JESD 47
J-STD-020,
• Glass passivated pellet chip junction
according
to
2
3
1
TO-263AB (D
2
PAK)
1
Anode
3
Anode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
j
max.
Diode variation
TO-263AB (D
2
PAK)
25 A
800 V, 1000 V, 1200 V
1.14 V
300 A
150 °C
Single die
• Input rectification
• Vishay switches and output rectifiers which are available
in identical package outlines
DESCRIPTION
The VS-25ETS..SPbF rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
20
THREE-PHASE BRIDGE
23
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
25
800 to 1200
300
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-25ETS08SPbF
VS-25ETS10SPbF
VS-25ETS12SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
1
I
RRM
AT 150 °C
mA
Revision: 12-Feb-16
Document Number: 94342
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS..SPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 106 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
25
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
25 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
VALUES
1.14
9.62
0.87
0.1
V
R
= Rated V
RRM
mA
1.0
UNITS
V
m
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
0.07
minimum
Mounting torque
maximum
12 (10)
6 (5)
oz.
kgf · cm
(lbf · in)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.9
62
0.5
2
g
°C/W
UNITS
°C
25ETS08S
Marking device
Case style TO-263AB (D
2
PAK)
25ETS10S
25ETS12S
Revision: 12-Feb-16
Document Number: 94342
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS..SPbF Series
www.vishay.com
Vishay Semiconductors
60
150
R
thJC
(DC) = 0.9 K/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
0
5
10
15
20
25
30
30°
60°
90°
120°
180°
Ø
Maximum Average Forward
Power Loss (W)
50
40
30
20
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
Ø
10
0
0
10
20
Conduction period
T
J
= 150 °C
30
40
94342_01
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
94342_04
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
R
thJC
(DC) = 0.9 K/W
300
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
Ø
Peak Half Sine Wave
Forward Current (A)
130
120
Conduction period
200
DC
110
30°
100
90
0
5
10
15
20
25
30
35
40
60°
120°
90°
180°
100
0
1
94342_05
10
100
94342_02
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
40
300
180°
120°
90°
60°
30°
RMS limit
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
35
30
25
20
15
10
5
Peak Half Sine Wave
Forward Current (A)
200
100
Ø
Conduction angle
T
J
= 150 °C
0
0
5
10
15
20
25
30
0
0.01
94342_06
0.1
1
10
94342_03
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 12-Feb-16
Document Number: 94342
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS..SPbF Series
www.vishay.com
Vishay Semiconductors
1000
T
J
= 25 °C
100
T
J
= 150 °C
Instantaneous Forward Current (A)
10
1
0
1
2
3
4
5
94342_07
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
0.1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
0.0001
94342_08
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 12-Feb-16
Document Number: 94342
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS..SPbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
25
2
E
3
T
4
S
5
12
6
S
7
TRL PbF
8
9
Vishay Semiconductors product
Current rating (25 = 25 A)
Circuit configuration
E = single diode
Package:
T = TO-220AC
Type of silicon:
S = standard recovery rectifier
Voltage code x 100 = V
RRM
S = TO-220 D
2
PAK (SMD-220) version
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
08 = 800 V
10 = 1000 V
12 = 1200 V
9
-
PbF = lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-25ETS08SPbF
VS-25ETS08STRRPbF
VS-25ETS08STRLPbF
VS-25ETS10SPbF
VS-25ETS10STRRPbF
VS-25ETS10STRLPbF
VS-25ETS12SPbF
VS-25ETS12STRRPbF
VS-25ETS12STRLPbF
QUANTITY PER TUBE
50
800
800
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Revision: 12-Feb-16
Document Number: 94342
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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