Not Available for New Designs, Use VS-UFL230FA60
UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 200 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
ISOL
= 2500 V
AC
)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: Welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
PRODUCT SUMMARY
t
rr
I
F(AV)
at T
C
= 105 °C
V
R
102 ns
200 A
600 V
The UFL200FA60P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping
life-time control, provide a ultrasoft recovery current shape,
together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
Isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 85 °C
T
C
= 25 °C
T
C
= 85 °C
Any terminal to case, t = 1 min
TEST CONDITIONS
MAX.
600
144
1000
360
2500
- 55 to 175
UNITS
V
A
W
V
°C
Document Number: 94551
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Not Available for New Designs, Use VS-UFL230FA60
UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 100 A
Forward voltage
V
FM
I
F
= 200 A
I
F
= 100 A, T
J
= 125 °C
I
F
= 200 A
Reverse leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 175 °C, V
R
= V
R
rated
V
R
= 600 V
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.28
1.48
1.13
1.37
5
0.2
80
MAX.
-
1.44
1.66
1.24
1.55
100
1
-
μA
mA
pF
V
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
V
R
= 200 V
dI
F
/dt = 200 A/μs
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
102
210
9
21
443
2086
MAX.
141
293
12
25
744
3355
UNITS
ns
Peak recovery current
A
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case,
single leg conducting
Junction to case,
both leg conducting
Case to heatsink
Weight
Mounting torque
SYMBOL
TEST CONDITIONS
MIN.
-
R
thJC
-
R
thCS
Flat, greased surface
-
-
-
-
0.05
30
1.3
0.25
-
-
-
g
Nm
K/W
TYP.
-
MAX.
0.5
UNITS
°C/W
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94551
Revision: 21-Jul-10
Not Available for New Designs, Use VS-UFL230FA60
UFL200FA60P
Insulated Ultrafast
Rectifier Module, 200 A
1000
175°C
100
10
1
0.1
0.01
0.001
100
200
300
400
500
600
125°C
Vishay Semiconductors
1000
Reverse Current - I
R
(μA)
25°C
(A)
100
Tj = 175°C
Instantaneous Forward Current - I
F
Reverse Voltage - V
R
(V)
Fig. 1 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
10
Tj = 125°C
Junction Capacitance - C
T
(pF)
T J = 25˚C
1000
Tj = 25°C
100
1
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
10
10
100
Reverse Voltage - V
R
(V)
1000
Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage
1
(°C/W)
Thermal Impedance Z
thJC
P
DM
0.1
t1
Single Pulse
(Thermal Resistance)
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
1
10
Fig. 3 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Document Number: 94551
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Not Available for New Designs, Use VS-UFL230FA60
UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
250
Vr = 200V
200
Allowable Case Temperature (°C)
200
If = 50A, 125°C
150
trr ( ns )
100
DC
150
50
Square wave (D=0.50)
80% rated Vr applied
If = 50A, 25°C
100
see note (1)
0
0
50
100
150
200
250
50
100
1000
Average Forward Current - I
F(AV)
(A)
di
F
/dt (A/μs )
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
3500
Vr = 200V
180
3000
Average Power Loss ( W )
150
2500
120
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
If = 50A, 125°C
90
Qrr ( nC )
RMS Limit
2000
1500
60
DC
30
1000
If = 50A, 25°C
0
0
25
50
75
100
125
150
500
Average Forward Current - I
F(AV)
(A)
0
100
1000
Fig. 5 - Forward Power Loss Characteristics (Per Leg)
di
F
/dt (A/μs )
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94551
Revision: 21-Jul-10
Not Available for New Designs, Use VS-UFL230FA60
UFL200FA60P
Insulated Ultrafast
Rectifier Module, 200 A
50
Vr = 200V
40
Vishay Semiconductors
If = 50A, 125°C
30
Irr ( A )
20
If = 50A, 25°C
10
0
100
1000
di
F
/dt (A/μs )
Fig. 9 - Typical Stored Current vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
Document Number: 94551
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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