VS-UFB210FA40P
www.vishay.com
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 210 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
J
max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
1
4
2
3
SOT-227
DESCRIPTION
PRODUCT SUMMARY
V
R
I
F(AV)
per module at T
C
= 133 °C
t
rr
Type
Package
400 V
210 A
40 ns
Modules - Diode FRED Pt
®
SOT-227
The VS-UFB210FA40P insulated modules integrate two
state of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F
(1)
TEST CONDITIONS
T
C
= 90 °C
T
C
= 25 °C
T
C
= 90 °C
Any terminal to case, t = 1 minute
MAX.
400
210
1300
531
2500
-55 to +175
UNITS
V
A
W
V
°C
I
FSM
P
D
V
ISOL
T
J
, T
Stg
Note
(1)
Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
Reverse leakage current
Junction capacitance
Revision: 22-Jul-13
SYMBOL
V
BR
V
FM
I
RM
C
T
I
R
= 100 μA
I
F
= 100 A
I
F
= 100 A, T
J
= 175 °C
V
R
= V
R
rated
T
J
= 175 °C, V
R
= V
R
rated
V
R
= 400 V
TEST CONDITIONS
MIN.
400
-
-
-
-
-
TYP.
-
1.06
0.85
1.3
0.36
100
MAX.
-
1.24
0.95
50
4
-
μA
mA
pF
V
UNITS
Document Number: 93994
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB210FA40P
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 150 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
TYP.
40
93
172
10.5
20.2
490
1740
MAX.
-
-
-
-
-
-
-
A
nC
ns
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both leg conducting
Case to heatsink
Weight
Mounting torque
Case style
SYMBOL
R
thJC
R
thCS
Flat, greased surface
TEST CONDITIONS
MIN.
-
-
-
-
-
TYP.
-
-
0.1
30
-
SOT-227
MAX.
0.32
0.16
-
-
1.3
g
Nm
°C/W
UNITS
I
F
- Instantaneous Forward Current (A)
1000
1000
100
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
T
J
= 175 °C
T
J
= 175 °C
T
J
= 25 °C
10
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
10 000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
10
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 22-Jul-13
Document Number: 93994
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB210FA40P
www.vishay.com
Vishay Semiconductors
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
t
1
DC
Single pulse
(thermal resistance)
0.01
0.0001
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
.
10
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
175
250
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
200
Allowable Case Temperature (°C)
150
125
I
F
= 150 A
I
F
= 75 A
t
rr
(ns)
300
350
100
75
50
25
0
0
50
100
150
200
DC
Square wave (D = 0.5)
80 % rated V
R
applied
150
100
See note
(1)
250
50
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
500
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
5000
4500
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 150 A
I
F
= 75 A
Forward Power Loss (W)
400
4000
3500
RMS limit
Q
rr
(nC)
300
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
3000
2500
2000
1500
1000
500
200
100
DC
0
0
50
100
150
200
250
300
350
0
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Revision: 22-Jul-13
Document Number: 93994
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB210FA40P
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 22-Jul-13
Document Number: 93994
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-UFB210FA40P
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
UF
2
B
3
210
4
F
5
A
6
40
7
P
8
Vishay Semiconductors product
Ultrafast rectifier
Ultrafast Pt diffused
Current rating (210 = 210 A)
Circuit configuration (2 separate diodes, parallel pin-out)
Package indicator (SOT-227 standard insulated base)
Voltage rating (40 = 400 V)
• None = Standard production
• P = Lead (Pb)-free
Quantity per tube is 10, M4 screw and washer included
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Lead Assignment
2 separate diodes,
parallel pin-out
4
3
4
3
F
1
2
1
2
LINKS TO RELATED DOCUMENTS
Dimensions
Packaging information
www.vishay.com/doc?95036
www.vishay.com/doc?95425
Revision: 22-Jul-13
Document Number: 93994
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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