V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.55 V at I
F
= 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
K
FEATURES
TO-262AA
TO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
V40150C
PIN 1
PIN 3
1
PIN 2
CASE
2
3
1
VI40150C
PIN 1
PIN 3
PIN 2
K
2
3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for TO-263AB package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
2
1
VB40150C
PIN 1
PIN 2
K
HEATSINK
MECHANICAL DATA
Case:
TO-220AB, TO-262AA, and D
2
PAK (TO-263AB),
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
per
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Circuit configuration
2 x 20 A
150 V
160 A
0.75 V
150 °C
TO-220AB, TO-262AA,
D
2
PAK (TO-263AB)
Common cathode
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
V40150C
VB40150C
150
40
20
160
10 000
-55 to +150
VI40150C
UNIT
V
A
A
V/μs
°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Revision: 19-Jun-2018
Document Number: 89250
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 5 A
I
F
= 10 A
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
V
R
= 100 V
SYMBOL
TYP.
0.69
0.84
1.15
0.55
0.64
0.75
2
2.5
-
5
MAX.
-
-
1.43
-
-
0.82
-
-
250
25
μA
mA
μA
mA
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage per diode
Reverse current per diode
V
R
= 150 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
V40150C
VB40150C
1.8
VI40150C
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
TO-262AA
TO-263AB
PREFERRED P/N
V40150C-M3/4W
VI40150C-M3/4W
VB40150C-M3/I
UNIT WEIGHT (g)
1.89
1.46
1.39
PACKAGE CODE
4W
4W
I
BASE QUANTITY
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tape and reel
Revision: 19-Jun-2018
Document Number: 89250
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
50
100
Average Forward Rectified Current (A)
Instantaneous Reverse Current (mA)
Resistive or Inductive Load
40
10
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
1
30
0.1
20
0.01
T
A
= 25 °C
0.001
10
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
175
0.0001
10
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
20
18
D = 0.5
D = 0.3
D = 0.2
Transient Thermal Impedance (°C/W)
D = 0.8
10
Junction to Case
Average Power Loss (W)
16
14
12
D = 1.0
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
D = t
p
/T
t
p
T
D = 0.1
1
0.1
0.01
0.1
1
10
100
Average Forward Current (A)
t - Pulse Duration (s)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
T
A
= 150 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Instantaneous Forward Current (A)
10
T
A
= 125 °C
T
A
= 100 °C
1
T
A
= 25 °C
Junction Capacitance (pF)
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
Revision: 19-Jun-2018
Document Number: 89250
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40150C, VB40150C, VI40150C
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
Revision: 19-Jun-2018
Document Number: 89250
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40150C, VB40150C, VI40150C
www.vishay.com
Vishay General Semiconductor
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
0.095 (2.41)
Revision: 19-Jun-2018
Document Number: 89250
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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