V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.42 V at I
F
= 5 A
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
FEATURES
ITO-220AB
TO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
V40100G
PIN 1
PIN 3
PIN 2
CASE
2
1
3
VF40100G
PIN 1
PIN 3
1
PIN 2
2
3
D
2
PAK
K
(TO-263AB)
K
TO-262AA
TYPICAL APPLICATIONS
2
1
VB40100G
PIN 1
PIN 2
K
HEATSINK
VI40100G
PIN 1
PIN 3
1
2
3
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICALDATA
Case:
TO-220AB, ITO-220AB, D
2
PAK (TO-263AB) and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
per
PIN 2
K
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Circuit configuration
2 x 20 A
100 V
200 A
0.67 V
150 °C
TO-220AB, ITO-220AB,
D
2
PAK (TO-263AB), TO-262AA
Common cathode
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
SYMBOL V40100G VF40100G VB40100G VI40100G UNIT
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
100
40
20
200
230
1.0
10 000
1500
-40 to +150
V
A
A
mJ
A
V/μs
V
°C
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Non-repetitive avalanche energy at T
J
= 25 °C, L = 90 mH per diode
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
per diode
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Revision: 19-Jun-2018
Document Number: 88970
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 5 A
I
F
= 10 A
Instantaneous forward voltage
per diode
(1)
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
V
R
= 70 V
Reverse current per diode
(2)
V
R
= 100 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R
T
A
= 125 °C
T
A
= 25 °C
V
F
T
A
= 25 °C
SYMBOL
V
BR
TYP.
100 min.
0.49
0.59
0.75
0.42
0.54
0.67
12
8
55
21
MAX.
-
-
-
0.81
-
-
0.73
-
-
500
35
μA
mA
μA
mA
V
UNIT
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
V40100G
2.0
VF40100G
5.0
VB40100G
2.0
VI40100G
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
V40100G-E3/4W
VF40100G-E3/4W
VB40100G-E3/4W
VB40100G-E3/8W
VI40100G-E3/4W
UNIT WEIGHT (g)
1.88
1.75
1.39
1.39
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
50
18
Resistive or Inductive Load
D = 0.8
16
Average Forward Rectified Current (A)
Average Power Loss (W)
40
VF40100G
30
VB(I)40100G
14
12
10
8
6
4
2
D = 0.1
D = 0.3
D = 0.2
D = 0.5
D = 1.0
20
T
10
D = t
p
/T
0
5
10
15
20
t
p
25
0
0
25
50
75
100
125
150
175
0
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 -
Maximum Forward Current Derating Curve
Fig. 2 -
Forward Power Loss Characteristics
Revision: 19-Jun-2018
Document Number: 88970
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
Vishay General Semiconductor
10
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
T
A
= 150 °C
10
T
A
= 125 °C
1
1
T
A
= 25 °C
V(B,I)40100G
0.1
0.01
0.1
1
10
100
0.1
0
0.2
0.4
0.6
0.8
1
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 -
Typical Instantaneous Forward Characteristics
Fig. 6 -
Typical Transient Thermal Impedance
100
10
Instantaneous Reverse Current (mA)
Transient Thermal Impedance (°C/W)
T
A
= 150 °C
Junction to Case
10
T
A
= 125 °C
1
0.1
T
A
= 25 °C
0.01
VF40100G
1
0.01
0.1
1
10
100
0.001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 -
Typical Reverse Characteristics
Fig. 7 -
Typical Transient Thermal Impedance
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 -
Typical Junction Capacitance
Revision: 19-Jun-2018
Document Number: 88970
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 19-Jun-2018
Document Number: 88970
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 19-Jun-2018
Document Number: 88970
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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