01/99
B-45
IFN5432, IFN5433, IFN5434
N-Channel Silicon Junction Field-Effect Transistor
¥ Analog Low On Resistance
Switches
¥ Choppers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
100 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Drain Source ON Voltage
Static Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
r
ds(on)
C
iss
C
rss
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
I
D(OFF)
V
DS
r
DS(ON)
IFN5432
Min
– 25
– 200
– 200
–4
150
200
200
50
2
5
– 10
Max
IFN5433
Min
– 25
– 200
– 200
–3
100
200
200
70
7
–9
Max
IFN5434
Min
– 25
– 200
– 200
–1
30
200
200
100
10
–4
Max
Unit
V
pA
nA
V
mA
pA
nA
mV
Ω
Ω
pF
pF
Process NJ903
Test Conditions
I
G
= – 1µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 5V, I
G
= 3 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 5V, V
GS
= – 10V
V
DS
= 5V, V
GS
= – 10V
V
GS
= ØV, I
D
= 10 mA
V
DS
= ØV, I
D
= 10 mA
T
A
= 150°C
T
A
= 150°C
5
60
20
7
60
20
10
60
20
V
GS
= ØV, I
D
= ØA
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
f = 1 kHz
f = 1 MHz
f = 1 MHz
4
1
6
30
4
1
6
30
4
1
6
30
ns
ns
ns
ns
V
DD
= 1.5 V, V
GS(ON)
= ØV
V
GS(OFF)
= – 12V, I
D(ON)
= 10 mA
(IFN5432)
R
L
= 145
Ω
(IFN5433)
R
L
= 143
Ω
(IFN5433)
R
L
= 140
Ω
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
