Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
BTA08-600BW3G, BTA08-800BW3G
Description
RoHS
Pb
Designed for high performance full-wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Features
• Blocking Voltage to 800 V
• On-State Current Rating of 8 A RMS at 80°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 2000 V/s minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 1.5 A/ms minimum at 125°C
Pin Out
• Internally Isolated (2500 V
RMS
)
• These Devices are Pb−Free and are RoHS Compliant
Functional Diagram
1
2
TO 220AB
CASE 221A
STYLE 12
MT2
G
MT1
Additional Information
Datasheet
Resources
Samples
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Maximum Ratings †
(T
J
= 25°C unless otherwise noted)
Rating
Part Number
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(T
J
= -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
On-State RMS Current
(180° Conduction Angles; T
C
= 80°C)
Peak Non−Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
C
= 80°C)
Circuit Fusing Considerations (t = 8.3 ms)
BTA08–600BW3G
BTA08–800BW3G
V
DRM,
V
RRM
600
V
800
8.0
A
I
T
(RMS)
I
TSM
I
2
t
V
DSM,
V
RSM
I
GM
P
GM
P
G(AV)
T
J
T
stg
V
iso
90
36
V
DRM
/V
RRM
+100
4.0
20
1.0
−40 to +125
−40 to +150
2500
A
A
2
sec
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms)
Peak Gate Current (T
J
= 125ºC, t = 20ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80ºC)
Average Gate Power (T
J
= 125ºC)
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25ºC)
V
A
W
W
ºC
ºC
V
† Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Maximum Ratings †
(T
J
= 25°C unless otherwise noted)
Rating
Thermal Resistance, Junction-to-Case (AC)
Thermal Resistance, Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
† Indicates JEDEC Registered Data
Symbol
Value
Unit
R
Θ
JC
R
Θ
JA
T
L
2.5
63
260
°C/W
°C/W
°
C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Electrical Characteristics
-
OFF
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
-
-
Typ
-
-
Max
0.005
mA
2.0
Unit
Peak Repetitive Blocking Current
(V
AK
= V
DRM
= V
RRM
; Gate Open)
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
Electrical Characteristics
-
ON
Characteristic
Peak On-State Voltage (Note 2) (I
TM
= ±11 A Peak)
MT2(+), G(+)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 30 Ω)
MT2(+), G(−)
MT2(−), G(−)
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current = ±100 mA)
MT2(+), G(+)
Latching Current (V
D
= 24 V, I
G
= 42 mA)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
Gate Trigger Voltage (V
D
= 12 V, R
L
= 30 Ω)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
Gate Non−Trigger Voltage (T
J
= 125°C)
MT2(+), G(−)
MT2(−), G(−)
t
gt
V
GT
IL
IH
I
GT
Symbol
V
TM
Min
−
2.5
2.5
2.5
−
Typ
−
−
−
−
−
Max
1.55
50
50
50
60
mA
mA
Unit
V
−
−
−
0.5
0.5
0.5
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
70
90
70
1.7
1.1
1.1
−
−
−
V
V
mA
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Dynamic Characteristics
Characteristic
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of On-State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
Critical Rate−of−Rise of Off-State Voltage
(V
D
= 0.66 x V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
Symbol
(dl/dt)
C
Min
3.0
Typ
–
Max
−
Unit
A/ms
dl/dt
−
−
50
A/µs
dv/dt(c)
1500
–
−
V/µs
Voltage Current Characteristic of SCR
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
I
I
I
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
Thyristors
Surface Mount – 600 - 800V > BTA08-600BW3G, BTA08-800BW3G
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
12
DC
10
P
AV
, AVERAGE POWER (W)
180°
8
6
4
2
0
I
T(RMS)
, ON-STATE CURRENT (A)
α
= 30°
60°
90°
120°
Figure 3. On−State Characteristics
Figure 4. Thermal Response
r
(t)
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
100
Typical @
C
T
J
= 40
ϒ
Typical @ T
Typical @ T
J
J
1
= 25
ϒ
C
= 125
ϒ
C
0.1
I
T
, INSTANTANEOUS ON STATE CURRENT (A)
10
0.01
0.1
1
10
100
t, TIME (ms)
1000
1· 10
4
Figure 5. Holding Current Variation
1
Typical @ T
J
= 125
ϒ
C
J
Typical @ T
Typical @ T
= 25
ϒ
C
J
=
40
ϒ
C
0.1
00
.5
11
.5
22
.5
33
.5
44
.5
5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (V)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/18/17
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