FMG2G50US120
IGBT
FMG2G50US120
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short-circuit ruggedness is required.
Features
•
•
•
•
•
•
Short Circuit Rated Time; 10us @ T
C
=100°C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.6 V @ I
C
= 50A
High Input Impedance
Fast & Soft Anti-Parallel FWD
UL Certified No.E209204
Package Code : 7PM-GA
Application
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Weldings
Servo Controls
UPS
C1
E1/C2
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
T
J
T
STG
V
ISO
Mounting Torque
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminal Screw : M5
Mounting Screw : M5
@ T
C
= 100°C
FMG2G50US120
1200
± 20
50
100
50
100
320
10
-40 to +150
-40 to +125
2500
4.0
4.0
Units
V
V
A
A
A
A
W
us
°C
°C
V
N.m
N.m
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2004 Fairchild Semiconductor Corporation
FMG2G50US120 Rev. A
FMG2G50US120
Electrical Characteristics of IGBT
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
V
GE
= 0V, I
C
= 3mA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1200
--
--
--
--
0.6
--
--
--
--
3
± 100
V
V/°C
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
I
C
=50mA, V
CE
= V
GE
I
C
= 50A
,
V
GE
= 15V
5.0
--
7.0
2.6
8.5
3.0
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600 V, I
C
=50A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
180
80
400
65
4.68
3.48
175
75
390
120
5.6
4.4
--
400
60
210
--
--
--
150
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
us
nC
nC
nC
V
CC
= 600 V, I
C
= 50A,
R
G
=10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CC
= 600 V, V
GE
= 15V
100°C
@
T
C
=
V
CE
= 300 V, I
C
=50A,
V
GE
= 15V
Electrical Characteristics of DIODE
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
T
C
= 25°C unless otherwise noted
Test Conditions
I
F
= 50A
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
I
F
= 50A
di / dt = 700 A/us
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
2.3
2.2
160
220
29
36
2320
3960
Max.
3.0
--
--
--
--
--
--
--
Unit
s
V
ns
A
nC
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θJC
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
Typ.
--
--
0.035
240
Max.
0.39
0.47
--
--
Units
°C/W
°C/W
°C/W
g
©2004 Fairchild Semiconductor Corporation
FMG2G50US120 Rev. A
FMG2G50US120
1 0 0
Common Emitter
V
GE
= 15V
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
1 0 0
Common Emitter
T
C
= 25
℃
20V
15V
8 0
8 0
[ A ]
C
C o ll e c t o r C u r r e n t , I
C o ll e c t o r C u r r e n t , I
C
[ A ]
6 0
6 0
12V
4 0
4 0
V
GE
= 10V
2 0
2 0
0
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
C E
0
3 . 5
4 . 0
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
C E
3 . 0
3 . 5
C o ll e c t o r - E m it t e r V o lt a g e , V
[ V ]
C o ll e c t o r - E m it t e r V o lt a g e , V
[ V ]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
1 0 0
Common Emitter
T
C
= 125
℃
20V
5 . 0
4 . 5
Common Emitter
V
GE
= 15V
[ A ]
[ A ]
C o ll e c t o r C u r r e n t , I
C
8 0
C
15V
4 . 0
3 . 5
3 . 0
2 . 5
2 . 0
1 . 5
80A
C o ll e c t o r C u r r e n t , I
6 0
12V
4 0
V
GE
= 10V
50A
I
C
= 30A
2 0
0
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
C E
1 . 0
3 . 0
3 . 5
2 5
5 0
7 5
C
1 0 0
1 2 5
C o ll e c t o r - E m it t e r V o lt a g e , V
[ V ]
C a s e T e m p e r a t u r e , T
[
0
C ]
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
1 0 0 0
S w it c h i n g T i m e [ n s ]
S w it c h i n g T i m e [ n s ]
Common Emitter
V
GE
= ± 15 V, R
G
= 10
Ω
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
1 0 0 0
Common Emitter
V
GE
= ± 15 V, R
G
= 10
Ω
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
T o n
T o ff
T r
1 0 0
1 0 0
T f
3 0
4 0
5 0
6 0
C
7 0
8 0
3 0
4 0
5 0
6 0
C
7 0
8 0
C o ll e c t o r C u r r e n t , I
[ A ]
C o ll e c t o r C u r r e n t , I
[ A ]
Fig 5. Turn-On Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
Fig 6. Turn-Off Characteristics vs.
Collector Current
FMG2G50US120 Rev. A
FMG2G50US120
1 4
1 2
Common Emitter
V
GE
= ± 15 V, R
G
= 10
Ω
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
Common Emitter
V
CC
= 600 V, V
GE
= ± 15 V
I
C
= 50 A
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
1 0 0 0
E o n
S w it c h i n g L o s s [ m J ]
1 0
8
6
S w it c h i n g T i m e [ n s ]
T o n
E o ff
4
2
0
3 0
4 0
5 0
6 0
C
T r
1 0 0
7 0
8 0
0
6
1 2
1 8
2 4
G
3 0
3 6
4 2
C o ll e c t o r C u r r e n t , I
[ A ]
G a t e R e sis t a n c e , R
[
Ω]
Fig 7. Switching Loss vs. Collector Current
Fig 8. Turn-on Characteristics vs.
Gate Resistance
1 5
S w it c h i n g T i m e [ n s ]
S w it c h i n g l o s s [ m J ]
1 0 0 0
Common Emitter
V
CC
= 600 V, V
GE
= ± 15 V
I
C
= 50 A
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
1 2
T o ff
Common Emitter
V
CC
= 600 V, V
GE
= ± 15 V
I
C
= 50 A
T
C
= 25
℃ ℃℃
T
C
= 125
℃
------
9
E o n
6
E o ff
3
1 0 0
T f
0
0
6
1 2
1 8
2 4
3 0
G
3 6
4 2
0
6
1 2
1 8
2 4
G
3 0
3 6
4 2
G a t e R e sis t a n c e , R
[
Ω]
G a t e R e sis t a n c e , R
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1 5
Common Emitter
R
L
= 12
Ω
V
CE
= 600V
T
C
= 25
℃
1 2 0
1 0 0
Common Cathode
V
GE
= 0V
T
C
= 25
℃
T
C
= 125
℃
[V]
[A]
Forward Current, I
F
1 2
GE
8 0
6 0
4 0
2 0
0
Gate - Emitter Voltage, V
6
3
0
9
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
3 5 0
4 0 0
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
3 . 0
3 . 5
4 . 0
Gate Charge, Qg [ nC ]
Forward Voltage, V
F
[V]
Fig 11. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Fig 12. Forward Characteristics(diode)
FMG2G50US120 Rev. A
FMG2G50US120
Peak Reverse Recovery Current, I
rr
[A]
Reverse Recovery Time, T
rr
[ns]
1 0 0 0
Common Cathode
di/dt = 700A/
㎲
T
C
= 25
℃
T
C
= 125
℃
-------
T
rr
1 0 0
I
rr
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
Forward Current, I
F
[A]
Fig 13. Reverse Recovery Characteristics(diode)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
FMG2G50US120 Rev. A
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