FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125
o
C
• Low Gate Charge . . . . . . . . . 30nC at V
GE
= 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low E
on
• Soft Recovery Diode
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Package
TO-247
E
C
G
Symbol
C
TO-220AB
E
C
G
TO-263AB
G
G
E
E
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
T
J
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
COLLECTOR (FLANGE)
Ratings
600
28
13
40
±20
±30
35A at 600V
100
125
1.0
-55 to 150
Units
V
A
A
A
V
V
A
mJ
W
W/°C
°C
Storage Junction Temperature Range
-55 to 150
°C
T
STG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Package Marking and Ordering Information
Device Marking
20N6S2D
20N6S2D
20N6S2D
20N6S2D
Device
FGH20N6S2D
FGP20N6S2D
FGB20N6S2D
FGB20N6S2DT
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Quantity
30
50
50
800 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
CES
I
CES
I
GES
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
I
C
= 250µA, V
GE
= 0
V
CE
= 600V
V
GE
= ± 20V
T
J
= 25°C
T
J
= 125°C
600
-
-
-
-
-
-
-
-
250
2.0
±250
V
µA
mA
nA
On State Characteristics
V
CE(SAT)
V
EC
Collector to Emitter Saturation Voltage
Diode Forward Voltage
I
C
= 7.0A,
V
GE
= 15V
I
EC
= 7.0A
T
J
= 25°C
T
J
= 125°C
-
-
-
2.2
1.9
1.9
2.7
2.2
2.7
V
V
V
Dynamic Characteristics
Q
G(ON)
V
GE(TH)
V
GEP
Gate Charge
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I
C
= 7.0A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
-
-
3.5
-
30
38
4.3
6.5
36
45
5.0
8.0
nC
nC
V
V
I
C
= 250µA, V
CE
= 600V
I
C
= 7.0A, V
CE
= 300V
Switching Characteristics
SSOA
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
rr
Switching SOA
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Diode Reverse Recovery Time
I
EC
= 7A, dI
EC
/dt = 200A/µs
I
EC
= 1A, dI
EC
/dt = 200A/µs
IGBT and Diode at T
J
= 125°C
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25Ω
L = 0.5mH
Test Circuit - Figure 26
T
J
= 150°C, R
G
= 25Ω, V
GE
=
15V, L = 0.5mH V
CE
= 600V
IGBT and Diode at T
J
= 25°C,
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25Ω
L = 0.5mH
Test Circuit - Figure 26
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7.7
4.5
87
50
25
85
58
7
4.5
120
85
20
125
135
26
20
-
-
-
-
-
-
-
75
-
-
145
105
-
140
180
31
24
A
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
Thermal Characteristics
R
θJC
NOTE:
1.
Values
Thermal Resistance Junction-Case
IGBT
Diode
-
-
1.0
2.2
°C/W
°C/W
for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss
of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
2.
Turn-Off
Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves
30
V
GE
= 15V
I
CE
, DC COLLECTOR CURRENT (A)
25
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V, L = 500µH
35
30
25
20
15
10
5
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
20
15
10
5
0
Figure 1. DC Collector Current vs Case
Temperature
700
T
C =
75
o
C
f
MAX
, OPERATING FREQUENCY (kHz)
400
V
GE
= 10V
V
GE
= 15V
Figure 2. Minimum Switching Safe Operating Area
12
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
V
CE
= 390V, R
G
= 25Ω, T
J
= 125 C
10
t
SC
8
I
SC
6
o
210
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
2.5
180
150
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.27
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 25Ω L = 500µH, V
CE
= 390V
,
120
4
90
20
1
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
2
9
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
Figure 3. Operating Frequency vs Collector to
Emitter Current
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
12
10
8
6
T
J
=
4
2
T
J
= 125
o
C
0
0.50
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
2.75
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
150
o
C
T
J
=
25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
Figure 4. Short Circuit Withstand Time
14
12
10
8
6
T
J
= 150
o
C
4
2
T
J
= 125
o
C
0
0.50
0.75
1.0
1.25
1.5
1.75
2.0
2.25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 25
o
C
DUTY CYCLE < 0.5%, V
GE
= 10V
PULSE DURATION = 250µs
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves
(Continued)
400
R
G
= 25Ω, L = 500µH, V
CE
= 390V
E
ON2
, TURN-ON ENERGY LOSS (
µJ)
E
OFF
TURN-OFF ENERGY LOSS (µJ)
350
300
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
250
200
150
100
50
T
J
=
0
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
25
o
C,
T
J
=
125
o
C,
V
GE
= 15V
0
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300
250
200
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
150
100
50
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
350
R
G
= 25Ω, L = 500µH, V
CE
= 390V
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
13
R
G
= 25Ω, L = 500µH, V
CE
= 390V
t
d(ON)I
, TURN-ON DELAY TIME (ns)
12
11
10
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
9
T
J
=
8
7
6
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
25
o
C,
T
J
=
125
o
C,
V
GE
= 15V
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
35
R
G
= 25Ω, L = 500µH, V
CE
= 390V
30
25
20
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
15
10
5
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
0
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
140
R
G
= 25Ω, L = 500µH, V
CE
= 390V
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
120
t
rI
, RISE TIME (ns)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
120
R
G
= 25Ω, L = 500µH, V
CE
= 390V
100
t
fI
, FALL TIME (ns)
T
J
= 125
o
C, V
GE
= 10V or 15V
100
80
80
60
T
J
= 25
o
C, V
GE
= 10V or 15V
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
60
0
2
4
6
8
10
12
14
40
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves
(Continued)
120
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
100
16
I
G(REF)
= 1mA, R
L
= 42.6Ω, T
J
= 25
o
C
14
12
V
CE
= 600V
10
8
6
V
CE
= 400V
4
V
CE
= 200V
2
0
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
80
T
J
= 25
o
C
60
40
20
T
J
= 125
o
C
T
J
= -55
o
C
0
Figure 13. Transfer Characteristic
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
0.8
R
G
= 25Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
0.6
I
CE
= 14A
10
Figure 14. Gate Charge
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
1
I
CE
= 14A
0.4
I
CE
= 7A
0.2
I
CE
= 3A
I
CE
= 7A
I
CE
= 3A
0.1
0.05
1
10
100
1000
R
G
, GATE RESISTANCE (Ω)
0
25
50
75
100
(
o
C)
125
150
T
C
, CASE TEMPERATURE
Figure 15. Total Switching Loss vs Case
Temperature
1.2
FREQUENCY = 1MHz
1.0
C, CAPACITANCE (nF)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 16. Total Switching Loss vs Gate
Resistance
3.6
3.4
3.2
I
CE
= 14A
3.0
2.8
2.6
2.4
2.2
2.0
I
CE
= 7A
I
CE
= 3A
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs, T
J
= 25
o
C
0.8
C
IES
0.6
0.4
C
OES
C
RES
0
10
20
30
40
50
60
70
80
90
100
0.2
0.0
5
6
7
8
9
10
11
12
13
14
15
16
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
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