PD - 95661
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
Lead-Free
HEXFET
®
Power MOSFET
IRL3714ZPbF
IRL3714ZSPbF
IRL3714ZLPbF
16m
:
V
DSS
R
DS(on)
max
20V
Qg
4.8nC
Benefits
l
Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3714Z
D
2
Pak
IRL3714ZS
TO-262
IRL3714ZL
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
Units
V
A
g
25
g
36
140
35
18
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
W
0.23
-55 to + 175
W/°C
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
Max.
4.3
–––
62
40
Units
°C/W
eÃ
e
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
h
Notes
through
are on page 12
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1
7/30/04
IRL3714Z/S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
20
–––
–––
–––
1.65
–––
–––
–––
–––
–––
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.015
13
21
2.1
-5.2
–––
–––
–––
–––
–––
4.8
1.7
0.80
1.7
0.60
2.5
2.7
6.0
13
10
5.0
550
180
99
–––
–––
16
26
2.55
–––
1.0
150
100
-100
–––
7.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 10V
ns
nC
nC
V
DS
= 10V
V
GS
= 4.5V
I
D
= 14A
S
nA
V
mV/°C
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
e
= 12A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 14A
See Fig. 16
V
DS
= 10V, V
GS
= 0V
V
DD
= 10V, V
GS
= 4.5V
I
D
= 14A
Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
23
14
3.5
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
8.3
1.5
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
36
g
Conditions
MOSFET symbol
D
A
140
1.0
12
2.3
V
ns
nC
Ã
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
T
J
= 25°C, I
F
= 14A, V
DD
= 10V
di/dt = 100A/µs
e
e
2
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IRL3714Z/S/LPbF
1000
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1000
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
3.0V
30µs PULSE WIDTH
Tj = 175°C
0.1
1
V DS, Drain-to-Source Voltage (V)
10
3.0V
1
0.1
1
30µs PULSE WIDTH
Tj = 25°C
10
1
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 36A
VGS = 10V
100
TJ = 25°C
T J = 175°C
1.5
10
1.0
VDS = 10V
30µs PULSE WIDTH
1.0
2
3
4
5
6
7
8
9
10
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRL3714Z/S/LPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 14A
VGS, Gate-to-Source Voltage (V)
5.0
VDS= 16V
VDS= 10V
C, Capacitance(pF)
1000
4.0
3.0
Ciss
Coss
100
Crss
2.0
1.0
10
1
10
100
0.0
0
1
2
3
4
5
6
7
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100µsec
T J = 25°C
1.00
0.0
0.5
1.0
1.5
1msec
10msec
100
VGS = 0V
2.0
2.5
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRL3714Z/S/LPbF
40
VGS(th) Gate threshold Voltage (V)
3.0
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
2.5
ID, Drain Current (A)
2.0
ID = 250µA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
1.292
0.000135
2.337
0.652
0.000882
0.005472
0.1
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
1
τ
2
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.01
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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