PD - 9.529B
IRCZ44
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Dynamic dv/dt Rating
Current Sense
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
V
DSS
= 60V
R
DS(on)
= 0.028Ω
I
D
= 50*A
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSense device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
TO-220 HexSense
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
50*
37
210
150
1.0
±20
30
4.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1 N•m)
Units
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
—
Min.
—
—
—
Typ.
—
0.50
—
Max.
1.0
—
62
Units
°C/W
C-13
IRCZ44
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
C
C
iss
C
oss
C
rss
r
C
oss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Current Sensing Ratio
Output Capacitance of Sensing Cells
Min.
60
–––
–––
2.0
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2460
–––
Typ.
–––
0.060
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
19
120
55
86
4.5
7.5
2500
1200
200
–––
9.0
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.028
Ω
V
GS
= 10V, I
D
= 31A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 31A
25
V
DS
= 60V, V
GS
= 0V
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
-100
V
GS
= -20V
95
I
D
= 52A
27
nC
V
DS
= 48V
46
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 30V
–––
I
D
= 52A
–––
R
G
= 9.1Ω
–––
R
D
= 0.54Ω, See Fig. 10
–––
nH
–––
–––
–––
–––
2720
–––
Between lead,
6 mm (0.25in.)
from package
and center of
die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
I
D
= 52A, V
GS
= 10V
V
GS
= 0V, V
DS
= 25V, ƒ = 1.0MHz
pF
–––
pF
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
140
1.2
50*
A
210
2.5
300
2.8
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 52A, V
GS
= 0V
T
J
= 25°C, I
F
= 52A
di/dt = 100A/µs
D
S
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
52A, di/dt
≤
250A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 0.013mH
R
G
= 25Ω, I
AS
= 52A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
C-14
IRCZ44
I
D
, Drain Current (Amps)
V
DS
, Drain-to-Source Voltage (Volts)
Fig. 1 Typical Output Characteristics,
T
C
=25°C
I
D
, Drain Current (Amps)
V
DS
, Drain-to-Source Voltage (Volts)
Fig. 2 Typical Output Characteristics,
T
C
=175°C
V
DS
, Gate-to-Source Voltage (Volts)
R
DS(on)
, Drain to Source On-Resistance
(Normalized)
I
D
, Drain Current (Amps)
T
J
, Junction Temperature (°C)
Fig. 4 Normalized On-Resistance vs.
Temperature
Fig. 3 Typical Transfer Characteristics
C-15
IRCZ44
V
DS
, Drain-to-Source Voltage (Volts)
Fig. 5 Typical Capacitance vs. Drain-to-
Source Voltage
V
GS
, Gate-to-Source Voltage (Volts)
Capacitance (pF)
Q
G
, Total Gate Charge (nC)
Fig. 6 Typical Gate Charge vs. Gate-to-
Source Voltage
I
SD
, Reverse Drain Current (Amps)
V
SD
, Source-to-Drain Voltage (Volts)
Fig. 7 Typical Source-Drain Diode
Forward Voltage
I
D
Drain Current (Amps)
V
DS
, Drain-to-Source Voltage (Volts)
Fig. 8 Maximum Safe Operating Area
C-16
IRCZ44
I
D
, Drain Current (Amps)
T
C
, Case Temperature (°C)
Fig. 9 Maximum Drain Current vs.
Case Temperature
I
D
, Drain Current (Amps)
Starting T
J
, Junction Temperature (°C)
Fig. 12c Maximum Avalanche Energy
vs. Drain Current
t
1
, Rectiangular Pulse Duration (seconds)
Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-17
Thermal Repsonse (Z
ΘJC
)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
