PD - 96975A
IRF7832Z
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
l
100% tested for Rg
V
DSS
30V
3.8m
:
@V
GS
= 10V
A
A
D
D
D
D
R
DS(on)
max
Qg
30nC
S
S
S
G
1
2
3
4
8
7
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
21
17
160
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
W
W/°C
°C
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
Junction-to-Drain Lead
g
Junction-to-Ambient
fg
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 10
www.irf.com
1
06/30/05
IRF7832Z
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
80
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.023
3.1
3.7
–––
-5.5
–––
–––
–––
–––
–––
30
7.9
2.6
11
8.5
13.6
19
1.2
14
15
18
5.6
3860
840
370
–––
–––
3.8
4.5
2.35
–––
1.0
150
100
-100
–––
45
–––
–––
–––
–––
–––
–––
1.9
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 16A
S
nA
V
mV/°C
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
e
= 16A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 16A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 16A
Clamped Inductive Load
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
350
16
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ. Max. Units
–––
–––
–––
16
29
3.1
A
160
1.0
24
44
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
DD
= 15V
di/dt = 500A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF7832Z
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
10
0.1
2.3V
≤
60µs PULSE WIDTH
Tj = 25°C
1
100
1000
0.1
10
2.3V
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
0.01
0.1
1
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 21A
VGS = 10V
100
1.5
10
TJ = 150°C
T J = 25°C
1.0
1
VDS = 15V
≤60µs
PULSE WIDTH
1
2
3
4
0.1
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
www.irf.com
3
IRF7832Z
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 16A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
T J = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10msec
1msec
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
1
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7832Z
25
VGS(th) Gate threshold Voltage (V)
2.5
20
ID, Drain Current (A)
2.0
ID = 250µA
1.5
15
10
1.0
5
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
10
Thermal Response ( Z thJA )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
Ri (°C/W)
τi
(sec)
τ
C
5.6971 0.015296
τ
28.314
16
P
DM
0.1
τ
1
τ
2
τ
3
0.01
Ci=
τi/Ri
Ci i/Ri
1.214900
40.40000
t
1
t
2
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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