VS-C4PU6006LHN3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode,
2 x 30 A FRED Pt
®
Gen 4
Base
common
cathode
2
FEATURES
• Gen 4 FRED Pt
®
technology
• Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polyimide passivated chip for high reliability
standard
1
2
3
• 175 °C operating junction temperature
TO-247AD 3L
1
3
Anode
Anode
2
1
2
Common
cathode
• AEC-Q101 qualified, meets JESD 201 class 1
whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AD 3L
2 x 30 A
600 V
1.19 V
See Recovery table
175 °C
Single die
DESCRIPTION
Gen 4 Fred technology, state of the art, ultralow V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce power dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current, per leg
Operating junction and storage temperature
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 131 °C
T
C
= 25 °C, t
p
= 8.3 ms, half sine wave
TEST CONDITIONS
MAX.
600
30
240
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
V
BR
, V
R
TEST CONDITIONS
I
R
= 100 μA
I
F
= 30 A
I
F
= 60 A
Forward voltage
V
F
I
F
= 30 A, T
J
= 125 °C
I
F
= 60 A, T
J
= 125 °C
I
F
= 30 A, T
J
= 150 °C
I
F
= 60 A, T
J
= 150 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
-
-
TYP.
-
1.36
1.6
1.23
1.5
1.19
1.48
-
-
18.3
MAX.
-
1.6
-
-
-
1.35
-
50
500
-
μA
pF
V
UNITS
Revision: 21-Feb-17
Document Number: 95950
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4PU6006LHN3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
t
rr
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
65
90
18
32
850
1850
MAX.
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heat sink
Weight
Mounting torque
Marking device
1000
SYMBOL
R
thJC
R
thCS
TEST CONDITIONS
MIN.
-
-
-
-
6.0
(5)
TYP.
-
0.4
6.0
0.21
-
MAX.
1
-
-
-
12
(10)
UNITS
°C/W
g
oz.
kgf · cm
(lbf · in)
Case style TO-247AD 3L
1000
175 °C
C4PU3006LH
I
F
- Instantaneous Forward Current (A)
I
R
- Reverse Current (μA)
100
10
1
0.1
0.01
0.001
150 °C
125 °C
100
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 °C
0
200
400
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
C
T
- Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 21-Feb-17
Document Number: 95950
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4PU6006LHN3
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.50
0.20
0.10
0.05
0.02
0.01
0.1
Single
pulse
0.01
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
140
130
120
160
110
DC
125 °C
Allowable Case Temperature (°C)
170
t
rr
(ns)
150
140
130
120
See
note
(1)
110
0
10
20
Square
wave (D = 0.50)
80 % rated V
R
applied
100
90
80
70
60
50
25 °C
30
40
50
400
500
600
700
800
900
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
180
160
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
140
130
RMS limit
120
110
125 °C
Average Power Loss (W)
140
120
80
60
40
20
0
0
10
20
30
40
50
60
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
t
rr
(ns)
100
100
90
80
70
60
50
25 °C
70
80
90
400
500
600
700
800
900
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T = T - (P + P
C
J
d
dREV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see Fig.5)
P
dREV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R
= rated V
R
dI
F
/dt (A/μs)
Fig. 8 - Typical Reverse Recovery Time vs. dI
F
/dt
Revision: 21-Feb-17
Document Number: 95950
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4PU6006LHN3
www.vishay.com
Vishay Semiconductors
2000
1800
125 °C
2000
1800
125 °C
1600
1400
1600
1400
Q
rr
(nC)
1200
1000
800
600
400
400
500
600
700
800
900
1000
25 °C
Q
rr
(nC)
1200
1000
25 °C
800
600
400
400
500
600
700
800
900
1000
dI
F
/dt (A/μs)
Fig. 9 - Typical Stored Charge vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
40
30
125 °C
I
rec
(A)
20
25 °C
10
0
400
500
600
700
800
900
1000
dI
F
/dt (A/μs)
Fig. 11 - Typical Reverse Current vs. dI
F
/dt
Revision: 21-Feb-17
Document Number: 95950
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4PU6006LHN3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
-
-
C
2
4
3
P
4
U
5
60
6
06
7
L
8
H
9
N3
10
Vishay Semiconductors product
Circuit configuration:
C = common diode
-
-
-
-
FRED Pt Gen 4
P = TO-247 package
Process type:
U = ultrafast recovery
Current rating (60 = 2 x 30 A)
7
8
9
10
-
-
-
-
Voltage rating (06 = 600 V)
Package: L = long lead
H = AEC-Q101 qualified
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-C4PU6006LHN3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 3L
TO-247AD 3L
www.vishay.com/doc?95626
www.vishay.com/doc?95007
Revision: 21-Feb-17
Document Number: 95950
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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