01/99
B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
¥ VHF Amplifiers
¥ Small Signal Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 50 V
10 mA
300 mW
2mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
V
(BR)GSS
I
GSS
2N3821
Min
– 50
– 0.1
– 0.1
– 0.5
–2
Max
2N3822
Min
– 50
– 0.1
– 0.1
–1
–4
–6
2
10
Max
Unit
V
nA
µA
V
V
V
V
mA
nA
µA
Process NJ32
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 15V, I
D
= 50 µA
V
DS
= 15V, I
D
= 200 µA
V
DS
= 15V, I
D
= 400 µA
V
DS
= 15V, I
D
= 0.5 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= – 8V
V
DS
= 15V, V
GS
= – 8V
T
A
= 150°C
T
A
= 150°C
Gate Source Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
Common Source
Forward Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
V
GS
V
GS(OFF)
I
DSS
I
D(OFF)
0.5
–4
2.5
r
ds(on)
g
fs
| Y
fs
|
g
os
C
iss
C
rss
e
N
¯
NF
1500 4500 3000 6500
1500
10
6
2
200
5
3000
20
6
2
Ω
µS
µS
µS
pF
pF
V
GS
= ØV, I
D
= Ø V
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
R
G
= 1 MΩ
f = 1 kHz
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 10 Hz
200 nV/√Hz
5
dB
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
B-4
01/99
2N3823, 2N3824
N-Channel Silicon Junction Field-Effect Transistor
¥ VHF Amplifiers
¥ Small Signal Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 50 V
10 mA
300 mW
2 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
Common Source
Forward Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
r
ds(on)
g
fs
| Y
fs
|
g
os
C
iss
C
rss
e
N
¯
NF
V
(BR)GSS
I
GSS
V
GS
V
GS(OFF)
I
DSS
I
D(OFF)
2N3823
Min
– 30
– 0.5
– 0.5
–1
4
– 7.5
–8
20
Max
2N3824
Min
– 50
– 0.1
– 0.1
Max
Unit
V
nA
µA
V
V
mA
0.1
0.1
nA
µA
Process NJ32
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 15V, I
D
= 400 µA
V
DS
= 15V, I
D
= 0.5 nA
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= – 8V
V
DS
= 15V, V
GS
= – 8V
T
A
= 150°C
T
A
= 150°C
250
3500 6500
3200
35
6
2
200
6
6
3
Ω
µS
µS
µS
pF
pF
nV/√Hz
dB
V
GS
= ØV, I
D
= Ø V
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
R
G
= 1 MΩ
f = 1 kHz
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
01/99
B-5
2N3954, 2N3955, 2N3956
N-Channel Dual Silicon Junction Field-Effect Transistor
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Voltage
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Output Capacitance
Common Source Input Capacitance
Drain Gate Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Differential Gate Source Voltage
with Temperature
Transconductance Ratio
g
fs
g
os
C
iss
C
dgo
C
rss
NF
| I
G1
– I
G2
|
V
(BR)GSS
I
GSS
I
G
V
GS
V
GS(OFF)
V
GS(F)
I
DSS
2N3954
Min
– 50
– 100
– 500
– 50
– 250
– 4.2
– 0.5
–1
0.5
–4
– 4.5
2
5
Max
2N3955
Min
– 50
– 100
– 500
– 50
– 250
– 4.2
– 0.5
–1
0.5
–4
– 4.5
2
5
Max
2N3956
Min
– 50
– 100
– 500
– 50
– 250
– 4.2
– 0.5
–1
0.5
–4
– 4.5
2
5
Max
Unit
V
pA
nA
pA
nA
V
V
V
V
mA
Process NJ16
Test Conditions
I
G
= – 1µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 50 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= – 20V, I
G
= 1 nA
V
DS
= ØV, I
G
= 1 mA
V
DS
= 20V, V
GS
= ØV
T
A
= 125°C
T
A
= 125°C
1000
1000
3000
35
4
1.5
1.2
0.5
10
1
5
0.8
1
1000
1000
3000
35
4
1.5
1.2
0.5
10
1000
1000
3000
35
4
1.5
1.2
0.5
10
µS
µS
µS
pF
pF
pF
dB
nA
mV
mV/°C
mV/°C
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
dg
= 10V, I
S
= ØA
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV,
R
g
= 10 MΩ
V
DS
= 20V, I
D
= 200µA
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, I
D
= 200µA
V
DS
= 20V, I
D
= 200µA
V
DS
= 20V, I
D
= 200µA
V
DS
= 20V, I
D
= 200µA
f = 1 kHz
f = 200 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 Hz
T
A
= 125°C
I
DSS1
/I
DSS2
0.95
| V
GS1
– V
GS2
|
∆V
GS1
– V
GS2
∆T
0.95
1
10
2
2.5
0.95
1
15
4
5
T
A
= 25°C
to = – 55°C
T
A
= 25°C
to = +125°C
f = 1 kHz
g
fs1
/g
fs2
0.97
1
0.97
1
0.97
1
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate,
5 Source, 6 Drain, 7 Gate
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
B-6
01/99
2N3957, 2N3958
N-Channel Dual Silicon Junction Field-Effect Transistor
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Voltage
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Drain Gate Capacitance
Common Source
Reverse Transfer Capacitance
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Differential Gate Source
Voltage with Temperature
Transconductance Ratio
g
fs
g
os
C
iss
C
dgo
C
rss
NF
| I
G1
– I
G2
|
I
DSS1
/ I
DSS2
| V
GS1
– V
GS2
|
∆V
GS1
– V
GS2
∆T
2N3957
Min
V
(BR)GSS
I
GSS
I
G
V
GS
V
GS(OFF)
V
GS(F)
I
DSS
0.5
– 50
– 100
– 500
– 50
– 250
– 4.2
– 0.5
–1
–4
– 4.5
2
5
Max
2N3958
Min
– 50
– 100
– 500
– 50
– 250
– 4.2
– 0.5
–1
0.5
–4
– 4.5
2
5
Max
Unit
V
pA
nA
pA
nA
V
V
V
V
mA
Process NJ16
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
GS
= – 30V, V
DS
= ØV
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 50 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 1 nA
V
DS
= Ø, I
G
= 1 mA
V
DS
= 20V, V
GS
= ØV
T
A
= 125°C
T
A
= 125°C
1000 3000 1000 3000
1000
35
4
1.5
1.2
0.5
10
0.9
1
20
6
7.5
0.9
1
0.85
0.85
1000
35
4
1.5
1.2
0.5
10
1
25
8
10
1
µS
µS
µS
pF
pF
pF
dB
nA
mV
mV
mV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
V
DS
= 10V, I
S
= ØA
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, V
GS
= ØV
R
G
= 10 MΩ
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, V
GS
= ØV
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
V
DS
= 20V, I
D
= 200 µA
f = 1 kHz
f = 200 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 Hz
T
A
= 125°C
T
A
= 25°C
to – 55°C
T
A
= 25°C
to 125°C
g
fs1
/ g
fs2
f = 1 kHz
TOÐ71 Package
See Section G for Outline Dimensions
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
www.interfet.com
01/99
B-7
2N3993, 2N3993A
P-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ High Speed Commutators
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
25 V
– 10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Reverse Current
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transmittance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
r
ds(on)
| Y
fs
|
C
iss
C
rss
V
(BR)GSS
V
GS(OFF)
I
DSS
I
DGO
I
D(OFF)
2N3993
Min
25
4
– 10
– 1.2
– 1.2
– 1.2
–1
9.5
Max
2N3993A
Min
25
4
– 10
– 1.2
– 1.2
– 1.2
–1
9.5
Max
Unit
V
V
mA
nA
µA
nA
µA
Process PJ99
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
DS
= – 10V, I
D
= – 1 µA
V
DS
= – 10V, V
GS
= ØV
V
DG
= – 15V, I
S
= ØA
V
DG
= – 15V, I
S
= ØA
V
DS
= – 10V, V
GS
= 10 V
V
DS
= – 10V, V
GS
= 10 V
T
A
= 150°C
T
A
= 150°C
150
6
12
16
4.5
7
150
12
12
3
Ω
mS
pF
pF
V
GS
= ØV, I
D
= Ø A
V
DS
= – 10V, V
GS
= ØV
V
DS
= – 10V, V
GS
= ØV
V
DS
= Ø, V
GS
= 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
嵌入式系统
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