TBD62183AFNG/FWG
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62183AFNG, TBD62183AFWG
8channel sink type DMOS transistor array
TBD62183A series are DMOS transistor array with 8 circuits. It
has a clamp diode for switching inductive loads built-in in each
output. Please be careful about thermal conditions during use.
TBD62183AFNG
Features
•
•
•
•
•
•
8 circuits built-in
High voltage
High current
Input voltage(output on)
Input voltage(output off)
Package
:
V
OUT
= 50 V (MAX)
:
I
OUT
= 50 mA/ch (MAX)
:
2.8 V (MIN)
:
0.6 V (MAX)
:
FNG type SSOP18-P-225-0.65
FWG type P-SOP18-0812-1.27-001
SSOP18-P-225-0.65
TBD62183AFWG
Pin connection (top view)
P-SOP18-0812-1.27-001
Weight
SSOP18-P-225-0.65
:
0.09 g (Typ.)
P-SOP18-0812-1.27-001
:
0.48 g (Typ.)
Pin connection may be simplified for explanatory purpose.
©2016 Toshiba Corporation
1
2016-07-15
TBD62183AFNG/FWG
Pin explanations
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Pin name
I1
I2
I3
I4
I5
I6
I7
I8
GND
COMMON
O8
O7
O6
O5
O4
O3
O2
O1
Function
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
GND pin
Common pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Equivalent circuit
COMMON
Clamp diode
INPUT
Clamp
OUTPUT
Equivalent circuit may be simplified for explanatory purpose.
©2016 Toshiba Corporation
2
2016-07-15
TBD62183AFNG/FWG
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics
Output voltage
COMMON pin voltage
Output current
Input voltage
Clamp diode reverse voltage
Clamp diode forward current
FNG (Note1)
Power
dissipation
FWG (Note2)
Operating temperature
Storage temperature
Symbol
V
OUT
V
COM
I
OUT
V
IN
V
R
I
F
P
D
T
opr
T
stg
Rating
50
−0.5
to 50
50
−0.5
to 30
50
50
0.96
1.31
−40
to 85
−55
to 150
Unit
V
V
mA/ch
V
V
mA
W
°C
°C
Note1: On PCB (Size: 50 mm
×
50 mm
×
1.6 mm, Cu area: 40 %, single-side glass epoxy).
When Ta exceeds 25 °C, it is necessary to do the derating with 7.7 mW/°C.
Note2: On PCB (Size: 75 mm
×
114 mm
×
1.6 mm, Cu area: 20 %, single-side glass epoxy).
When Ta exceeds 25 °C, it is necessary to do the derating with 10.48 mW/°C.
©2016 Toshiba Corporation
3
2016-07-15
TBD62183AFNG/FWG
Operating Ranges (Ta = −40 to 85 °C, unless otherwise noted)
Characteristics
Output voltage
COMMON pin voltage
FNG(Note1)
Output
current
FWG(Note2)
I
OUT
Symbol
V
OUT
V
COM
Condition
―
―
1 circuits ON, Ta = 25°C
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 50%
Duty = 100%
Min
―
0
0
0
0
0
0
0
2.8
0
Typ.
―
―
―
―
―
―
―
―
―
―
Max
50
50
45
45
33
45
45
38
25
0.6
Unit
V
V
1 circuits ON, Ta = 25°C
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 50%
Duty = 100%
mA/ch
Input voltage (Output on)
Input voltage (Output off)
V
IN (ON)
V
IN (OFF)
I
OUT
= 45 mA, V
OUT
= 2 V
I
OUT
= 100 μA or less, V
OUT
= 2 V
V
V
mA
45
Clamp diode forward current
I
F
―
―
―
Note1: On PCB (Size: 50 mm
×
50 mm
×
1.6 mm, Cu area: 40%, single-side glass epoxy).
Note2: On PCB (Size: 75 mm
×
114 mm
×
1.6 mm, Cu area: 20%, single-side glass epoxy).
©2016 Toshiba Corporation
4
2016-07-15
TBD62183AFNG/FWG
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics
Output leakage current
Output voltage
Symbol
I
leak
V
OUT
Test
Circuit
1
2
3
4
5
6
7
8
Condition
V
OUT
= 50 V, Ta = 85°C
V
IN
= 0 V
I
OUT
= 45 mA, V
IN
=5.0 V
I
OUT
= 10 mA, V
IN
=5.0 V
V
IN
= 3.0V
V
IN
= 0 V, Ta = 85°C
Min
―
―
―
―
―
―
―
―
―
―
Typ.
―
1.0
0.8
―
―
―
―
―
0.2
0.4
Max
1.0
1.4
1.0
0.1
1.0
2.8
1.0
1.5
―
―
Unit
μA
V
mA
μA
V
μA
V
μs
Input current (Output on)
I
IN (ON)
Input current (Output off)
I
IN (OFF)
Input voltage (Output on)
V
IN (ON)
Clamp diode reverse current
I
R
Clamp diode forward voltage
V
F
Turn−on delay
Turn−off delay
t
ON
t
OFF
I
OUT
= 45 mA, V
OUT
= 2 V
V
R
= 50 V, Ta = 85°C
I
F
= 45 mA
V
OUT
= 50 V
R
L
= 1k Ω
C
L
= 15 pF
©2016 Toshiba Corporation
5
2016-07-15
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