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UF1B B0G

产品描述DIODE GEN PURP 100V 1A DO204AL
产品类别半导体    分立半导体   
文件大小376KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

UF1B B0G概述

DIODE GEN PURP 100V 1A DO204AL

UF1B B0G规格参数

参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)100V
电流 - 平均整流(Io)1A
不同 If 时的电压 - 正向(Vf1V @ 1A
速度快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)50ns
不同 Vr 时的电流 - 反向漏电流5µA @ 100V
不同 Vr,F 时的电容17pF @ 4V,1MHz
安装类型通孔
封装/外壳DO-204AL,DO-41,轴向
供应商器件封装DO-204AL(DO-41)
工作温度 - 结-55°C ~ 150°C

文档预览

下载PDF文档
UF1A thru UF1M
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated chip junction
- Excellent high temperature switching
- ldally suited for use in very high frequency
switching power supplies, inverters and as free
wheeling diodes
- Ultrafast recovery time for high efficiency
- Soft recovery characteristics
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated High Efficient Rectifiers
DO-204AL (DO-41)
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.33g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
50
17
15
60
- 55 to +150
- 55 to +150
O
UNIT
V
V
V
A
A
50
35
50
100
70
100
200
140
200
400
280
400
1
30
600
420
600
800
560
800
1000
700
1000
1.0
5
150
1.7
V
μA
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
75
ns
pF
C/W
O
O
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405072
Version: F14

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