Z01
Standard 1A Triacs
Features
■
■
■
A2
On-state rms current, I
T(RMS)
1 A
Repetitive peak off-state voltage, V
DRM
/V
RRM
600 or 800 V
Triggering gate current, I
GT (Q1)
3 to 25 mA
G
A1
A2
G
A2
A1
TO-92
Z01xxA
G
A1
SOT-223
Z01xxN
A2
Description
The Z01 series is suitable for general purpose AC
switching applications. These devices are
typically used in applications such as home
appliances (electrovalve, pump, door lock, small
lamp control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performance when driven
directly through microcontrollers.
A1
G
SMBflat-3L
Z01xxMUF
A2
December 2010
Doc ID 7474 Rev 10
1/12
www.st.com
12
Characteristics
Z01
1
Characteristics
Table 1.
Symbol
On-state rms current
(full sine wave)
Absolute maximum ratings
Parameter
SOT-223
T
tab
= 90 °C
T
L
= 50 °C
T
tab
= 107 °C
t = 20 ms
t = 16.7 ms
8
A
F = 60 Hz
t
p
= 10 ms
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
8.5
0.35
20
1
1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
A
W
°C
1
A
Value
Unit
I
T(RMS)
TO-92
SMBflat-3L
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
I
²
t Value for fusing
F = 50 Hz
Critical rate of rise of on-state current
F = 120 Hz
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 20 µs
Table 2.
Symbol
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Z01
Test conditions
Quadrant
03
07
5
7
1.3
0.2
7
7
MAX.
II
MIN.
MIN.
15
10
0.5
20
20
1
25
50
2
50
100
5
V/µs
V/µs
10
10
10
15
25
25
mA
09
10
10
10
25
mA
5
MAX.
MIN.
MAX.
I - III - IV
25
V
V
mA
I - II - III
V
D
= 12 V,
R
L
= 30
Ω
V
D
= V
DRM
,
R
L
= 3.3 kΩ,
T
j
= 125 °C
I
T
= 50 mA
I
G
= 1.2 I
GT
MAX.
IV
ALL
ALL
3
Unit
I
GT (1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt
(2)
V
D
= 67% V
DRM
gate open
T
j
= 110 °C
(dV/dt)
c
(dI/dt)
c
= 0.44 A/ms,
(2)
T
j
= 110 °C
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of A2 referenced to A1.
2/12
Doc ID 7474 Rev 10
Z01
Table 3.
Symbol
V
TM(1)
V
to (1)
R
d (1)
I
DRM
I
RRM
I
TM
= 1.4 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Characteristics
Static characteristics
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
MAX.
MAX.
MAX.
MAX.
0.5
mA
Value
1.6
0.95
400
5
Unit
V
V
mΩ
µA
1. For both polarities of A2 referenced to A1.
Table 4.
Symbol
R
th(j-t)
R
th(j-t)
R
th(j-I)
Thermal resistances
Parameter
Junction to tab (AC)
Junction to tab (AC)
Junction to lead (AC)
S
(1)
= 5 cm
²
SOT-223
SMBflat-3L
TO-92
MAX.
SOT-223
SMBflat-3L
TO-92
60
75
150
Junction to ambient
Value
25
14
60
°C/W
Unit
R
th(j-a)
1. S = copper surface under tab.
Figure 1.
Maximum power dissipation
versus on-state rms current
(full cycle)
Figure 2.
On-state rms current versus lead
(TO-92) or tab (SOT-223, SMBflat-
3L) temperature (full cycle)
P(W)
1.50
α=180
°
I
T(RMS)
(A)
1.2
1.0
0.8
0.6
0.4
180°
1.25
1.00
0.75
0.50
0.25
SMBF3L
SOT-223
TO-92
0.2
I
T(RMS)
(A)
0.00
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
l
or T
tab
(°C)
0.0
0
25
50
75
100
125
Doc ID 7474 Rev 10
3/12
Characteristics
Z01
Figure 3.
On-state rms current versus
ambient temperature (free air
convection full cycle)
Figure 4.
Relative variation of thermal
impedance versus pulse duration
(Z
th(j-a)
)
I
T(RMS)
(A)
1.2
1.0
0.8
R
th (j-a)
= 100
°C/W
1.00
R
th(j-a)
= 60°C/W
(SOT-223)
K=[Z
th(j-a)
/R
th(j-a)]
Z01xxA
Z01xxMUF
Copper surface area
= 5cm²
0.6
0.4
0.2
R
th(j-a)
= 150°C/W
(TO-92)
(SMBflat-3L)
0.10
Z01xxN
T
amb
(°C)
0.0
0
25
50
75
100
125
t
p
(s)
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 5.
Relative variation of holding
Figure 6.
current and latching current versus
junction temperature (typ. values)
3.0
2.5
Relative variation of gate trigger
current (I
GT
) and voltage (V
GT
)
versus junction temperature
2.5
I
H
, I
L
[T
j
] /I
H
, I
L
[T
j
=25°C]
I
GT
, V
GT
[T
j
] / I
GT
, V
GT
[T
j
=25 °C]
2.0
I
GT
Q1-Q2
2.0
1.5
I
GT
Q3
I
GT
Q4
1.5
1.0
I
L
1.0
0.5
0.0
-50
V
GT
Q1-Q2-Q3-Q4
0.5
I
H
T
j
(°C)
0.0
-50
-25
0
25
50
75
100
125
T
j
(°C)
-25
0
25
50
75
100
125
Figure 7.
Surge peak on-state current versus Figure 8.
number of cycles
Non-repetitive surge peak
on-state current and corresponding
value of I
2
t sinusoidal pulse width
9
8
7
6
5
4
3
2
1
0
1
I
TSM
(A)
100.0
I
TSM
(A), I
2
t (A
2
s)
T
j
initial = 25°C
T = 20 ms
Non repetitive
T
j
initial = 25 °C
One cycle
dI/dt limitation:
20A/µs
I
TSM
10.0
1.0
Repetitive
T
amb
= 95 °C
I
2
t
Number of cycles
10
100
1000
0.1
0.01
t
p
(ms)
0.10
1.00
10.00
4/12
Doc ID 7474 Rev 10
Z01
Characteristics
Figure 9.
On-state characteristics
(maximum values) (I
TM
= f(V
TM
)
Figure 10. Relative variation of critical rate
of decrease of main current versus
(dV/dt)
c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
TM
(A)
10.0
T
j
= T
j
max.
1.0
T
j
= 25°C
T
j
=max.
V
t0
=0.95 V
R
d
=400 m
Ω
Z0103
Z0107
Z0109
Z0110
V
TM
(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
(dV/dt)c (V/µs)
0.1
1.0
10.0
100.0
Figure 11. Relative variation of critical rate of
decrease of main current (dI/dt)
versus junction temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
Specified]
6
5
4
3
2
1
Figure 12. SOT-223 and SMBflat-3L thermal
resistance junction to ambient
versus copper surface under case
R
th(j-a)
(°C/W)
170
160
150
140
130
120
110
100
90
80
SOT223
70
60
SMBF3L
T
j
(°C)
0
0
25
50
75
100
125
50
0
1
S
CU
(cm²)
2
3
4
5
Figure 13. Relative variation of static dV/dt immunity versus junction temperature (gate open)
6
dV/dt [T
j
] / dV/dt [T
j
=125 °C]
V
D
=V
R
=402V
5
4
3
2
1
T
j
(°C)
25
50
75
100
125
0
Doc ID 7474 Rev 10
5/12
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