NXP Semiconductors
Technical Data
Document Number: MRF1K50H
Rev. 1.1, 03/2017
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
This high ruggedness device is designed for use in high VSWR industrial,
scientific and medical applications, as well as radio and VHF TV broadcast,
sub--GHz aerospace and mobile radio applications. Its unmatched input and
output design allows for wide frequency range use from 1.8 to 500 MHz.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
27
81.36
(1)
87.5–108
(2,3)
230
(4)
Signal Type
CW
CW
CW
Pulse
(100
µsec,
20% Duty Cycle)
P
out
(W)
1550 CW
1400 CW
1475 CW
1500 Peak
G
ps
(dB)
25.9
23.0
23.3
23.7
η
D
(%)
78.3
75.0
83.4
74.0
NI-
-1230H-
-4S
P
in
(W)
Test
Voltage
MRF1K50H
1.8–500 MHz, 1500 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Load Mismatch/Ruggedness
Frequency
(MHz)
230
(4)
Signal Type
VSWR
Result
Gate A 3
1 Drain A
1.
2.
3.
4.
Pulse
> 65:1 at all
13 Peak
50
No Device
(100
µsec,
20% Phase Angles
(3 dB
Degradation
Duty Cycle)
Overdrive)
Data from 81.36 MHz narrowband reference circuit (page 11).
Data from 87.5–108 MHz broadband reference circuit (page 5).
The values shown are the center band performance numbers across the indicated
frequency range.
Data from 230 MHz narrowband production test fixture (page 16).
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Features
•
High drain--source avalanche energy absorption capability
•
Unmatched input and output allowing wide frequency range utilization
•
Device can be used single--ended or in a push--pull configuration
•
Characterized from 30 to 50 V for ease of use
•
Suitable for linear application
•
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
•
Recommended driver: MRFE6VS25N (25 W)
•
Lower thermal resistance part available: MRF1K50N
•
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
•
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
•
Broadcast
– Radio broadcast
– VHF TV broadcast
•
Aerospace
– VHF omnidirectional range (VOR)
– HF and VHF communications
– Weather radar
•
Mobile radio
– VHF and UHF base stations
©
2016–2017 NXP B.V.
Figure 1. Pin Connections
MRF1K50H
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
D
Value
–0.5, +135
–6.0, +10
50
– 65 to +150
–40 to +150
–40 to +225
1667
8.33
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 78°C, 1500 W CW, 50 Vdc, I
DQ(A+B)
= 200 mA, 88 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 73°C, 1500 W Peak, 100
µsec
Pulse Width, 20% Duty Cycle,
I
DQ(A+B)
= 100 mA, 230 MHz
Symbol
R
θJC
Z
θJC
Value
(2,3)
0.10
0.028
Unit
°C/W
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
B, passes 250 V
IV, passes 2000 V
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 30
µAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 2130
µAdc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D(A+B)
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 2.4 Adc)
Forward Transconductance
(4)
(V
DS
= 10 Vdc, I
D
= 36 Adc)
1.
2.
3.
4.
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1.7
1.9
—
—
2.2
2.4
0.15
33.5
2.7
2.9
—
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
135
—
—
—
—
—
—
1
—
10
20
µAdc
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Each side of device measured separately.
(continued)
MRF1K50H
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
3.48
205
664
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Functional Tests
(In NXP Production Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ(A+B)
= 100 mA, P
out
= 1500 W Peak (300 W Avg.),
f = 230 MHz, 100
µsec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
22.5
70.0
—
23.7
74.0
–18.3
25.5
—
–9
dB
%
dB
Table 5. Load Mismatch/Ruggedness
(In NXP Production Test Fixture, 50 ohm system) I
DQ(A+B)
= 100 mA
Frequency
(MHz)
230
Signal Type
Pulse
(100
µsec,
20% Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
13 Peak
(3 dB Overdrive)
Test Voltage, V
DD
50
Result
No Device Degradation
Table 6. Ordering Information
Device
MRF1K50HR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
NI--1230H--4S
1. Each side of device measured separately.
MRF1K50H
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
10000
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
C, CAPACITANCE (pF)
NORMALIZED V
GS(Q)
1000
C
oss
100
C
rss
10
C
iss
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
0.92
–50
–25
0
25
50
75
100
1500 mA
2000 mA
500 mA
I
DQ(A+B)
= 100 mA
V
DD
= 50 Vdc
T
C
, CASE TEMPERATURE (°C)
I
DQ
(mA)
100
500
1500
2000
Slope (mV/°C)
°
–2.87
–2.56
–2.29
–2.11
Note:
Each side of device measured separately.
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
0.11
Z
JC
, THERMAL IMPEDANCE (°C/W)
0.09
D = 0.7
MTTF (HOURS)
0.07
D = 0.5
0.05
D = 0.3
0.03
D = 0.1
0.01
0
0.00001
0.0001
0.001
0.01
P
D
t
1
t
2
D = Duty Factor = t
1
/t
2
t
1
= Pulse Width
t
2
= Pulse Period
T
J
= P
D
*
Z
JC
+ T
C
10
8
V
DD
= 50 Vdc
10
7
10
6
10
5
10
4
I
D
= 36.0 Amps
10
3
10
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at
http:/www.nxp.com/RF/calculators.
0.1
1
RECTANGULAR PULSE WIDTH (S)
Figure 4. Maximum Transient Thermal Impedance
Figure 5. MTTF versus Junction Temperature — CW
MRF1K50H
4
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Table 7. 87.5–108 MHz Broadband Performance
(In NXP Reference Circuit, 50 ohm system)
V
DD
= 50 Vdc, I
DQ(A+B)
= 200 mA, P
in
= 7 W, CW
Frequency
(MHz)
87.5
98
108
G
ps
(dB)
22.8
23.3
23.0
η
D
(%)
81.8
83.4
81.2
P
out
(W)
1325
1475
1410
MRF1K50H
RF Device Data
NXP Semiconductors
5
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