PD - 97485
IRF6706S2TRPbF
IRF6706S2TR1PbF
l
RoHS Compliant and Halogen Free
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Control FET Application
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
D
G
S
D
DirectFET Power MOSFET
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
4.4nC
R
DS(on)
3.0mΩ@10V
R
DS(on)
5.2mΩ@4.5V
25V max ±20V max
13nC
Q
gs2
1.8nC
Q
rr
21nC
Q
oss
9.5nC
V
gs(th)
1.8V
Applicable DirectFET Outline and Substrate Outline
S1
S2
SB
M2
M4
S1
DirectFET ISOMETRIC
L4
L6
L8
Description
The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6706S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6706S2TRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
15
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±20
17
13
63
130
42
13
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
ID= 13A
VDS= 20V
VDS= 13V
A
mJ
A
ID = 17A
10
T J = 125°C
5
0
0
2
4
6
T J = 25°C
8
10
12
14
16
18
20
30
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.50mH, R
G
= 25Ω, I
AS
= 13A.
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1
03/31/2010
IRF6706S2TR/TR1PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
78
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
18
3.0
5.2
1.8
-9.1
–––
–––
–––
–––
–––
13
3.1
1.8
4.4
3.7
6.2
9.5
0.4
12
20
9.9
9.2
1810
470
210
–––
–––
3.8
6.5
2.35
–––
1.0
150
100
-100
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
nC
Ω
Conditions
V V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 17A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 25µA
i
= 13A
i
mV/°C
µA V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
nA
S
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
=13A
V
DS
= 13V
nC
V
GS
= 4.5V
I
D
= 13A
See Fig. 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 13A
R
G
= 6.8Ω
V
GS
= 0V
pF
V
DS
= 13V
ƒ = 1.0MHz
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
17
21
33
A
130
1.0
26
32
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 13A, V
GS
= 0V
T
J
= 25°C, I
F
=13A
di/dt = 250A/µs
Ãg
i
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6706S2TR/TR1PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
1.8
1.3
26
270
-55 to + 175
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
el
jl
kl
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.012
Max.
82
–––
–––
5.7
–––
Units
°C/W
eÃ
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
1
τ
1
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
R
5
R
5
R
6
R
6
R
7
R
7
R
8
R
8
R
9
R
9
τ
A
τ
A
τ
2
τ
2
τ
3
τ
3
τ
4
τ
4
τ
5
τ
5
τ
6
τ
6
τ
7
τ
7
τ
8
τ
8
Ci=
τi/Ri
Ci=
τi/Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
Ri (°C/W)
0.003820
0.276771
0.698517
0.247425
4.481050
2.958857
12.34091
36.31499
24.50391
τi
(sec)
0.002036
0.147512
0.372293
0.131872
2.388293
1.577000
6.577408
19.35502
13.06
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(At lower pulse widths Zth
JA
& Zth
JC
are combined)
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
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3
IRF6706S2TR/TR1PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
1
100
1000
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
2.0
Fig 5.
Typical Output Characteristics
ID = 17A
ID, Drain-to-Source Current (A)
100
T J = 175°C
T J = 25°C
T J = -40°C
Typical RDS(on) (Normalized)
VDS = 15V
≤60µs
PULSE WIDTH
V GS = 10V
1.5
V GS = 4.5V
10
1.0
1
0.1
1
2
3
4
5
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
25
T J = 25°C
20
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Ciss
1000
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
15
Coss
10
Crss
5
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
25
50
75
100
125
150
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
4
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IRF6706S2TR/TR1PbF
1000
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
ISD, Reverse Drain Current (A)
100
100
T J = 175°C
T J = 25°C
T J = -40°C
10
10
1msec
10msec
DC
1
1
VGS = 0V
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0.1
T A = 25°C
T J = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
70
60
Fig 11.
Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
ID = 25µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
ID, Drain Current (A)
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12.
Maximum Drain Current vs. Case Temperature
100
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
180
EAS , Single Pulse Avalanche Energy (mJ)
Gfs, Forward Transconductance (S)
80
T J = 25°C
160
140
120
100
80
60
40
20
0
25
50
75
100
ID
TOP
2.3A
5.6A
BOTTOM 13A
60
T J = 175°C
40
20
V DS = 4.5V
380µs PULSE WIDTH
2
0
0
10
20
30
40
50
60
125
150
175
ID,Drain-to-Source Current (A)
Starting T J , Junction Temperature (°C)
Fig 14.
Typ. Forward Transconductance
vs. Drain Current
Fig 15.
Maximum Avalanche Energy
vs. Drain Current
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