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NL17SG07EDFT2G

产品描述BUFFER WITH OPEN DRAIN OU
产品类别半导体    逻辑   
文件大小66KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NL17SG07EDFT2G概述

BUFFER WITH OPEN DRAIN OU

NL17SG07EDFT2G规格参数

参数名称属性值
逻辑类型缓冲器,非反向
元件数1
每元件位数1
输出类型开路漏极
电流 - 输出高,低-,8mA
电压 - 电源0.9 V ~ 3.6 V
工作温度-55°C ~ 125°C(TA)
安装类型表面贴装
封装/外壳5-TSSOP,SC-70-5,SOT-353
供应商器件封装SC-88A(SC-70-5/SOT-353)

NL17SG07EDFT2G文档预览

NL17SG07E
Buffer with Open Drain
Output
The NL17SG07E MiniGatet is an advanced high−speed CMOS
Buffer with Open Drain Output in ultra−small footprint.
The NL17SG07E input and output structures provide protection
when voltages up to 3.6 V are applied regardless of the supply voltage.
Features
www.onsemi.com
Wide Operating V
CC
Range: 0.9 V to 3.6 V
High Speed: t
PD
= 2.5 ns (Typ) at V
CC
= 3.0 V, C
L
= 15 pF
Low Power Dissipation: I
CC
= 0.5
mA
(Max) at T
A
= 25°C
3.6 V Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
M
G
NC
1
5
V
CC
SC−88A
DF SUFFIX
CASE 419A
MARKING
DIAGRAM
A6 M
G
G
M
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
A
2
PIN ASSIGNMENT
GND
3
4
Y
PIN
1
NAME
NC
A
GND
Y
V
CC
Figure 1. SC−88A
(Top View)
2
3
4
A
1
Y
5
Figure 2. Logic Symbol
FUNCTION TABLE
Input A
L
H
Output Y
L
Z
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
August, 2018 − Rev. 2
Publication Order Number:
NL17SG07E/D
NL17SG07E
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Active Mode, LOW State
Tri−State Mode, Output at Hi−Z State
Power−Down Mode (V
CC
= 0 V)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5 to +4.6
−0.5 to +4.6
−0.5 to V
CC
+ 0.5
−0.5 to +4.6
−0.5 to +4.6
−20
−20
±20
±20
±20
−65 to +150
260
+150
Level 1
Oxygen Index: 28 to 34
Human Body Model (Note 2)
UL 94 V−0 @ 0.125 in
>2000
±75
V
mA
Unit
V
V
V
I
IK
I
OK
I
OUT
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
V
ESD
I
LATCHUP
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
mA
mA
mA
mA
mA
°C
°C
°C
Latch−up Performance above V
CC
and below GND at 125°C (Note 3)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Output at Low State
Tri−State Mode, Output at Hi−Z State
Power−Down Mode (V
CC
= 0 V)
V
CC
= 3.3 V
±
0.3 V
Characteristics
Min
0.9
0.0
0.0
0.0
0.0
−55
0
Max
3.6
3.6
V
CC
3.6
3.6
+125
10
Unit
V
V
V
T
A
Dt
/
DV
Operating Temperature Range
Input Transition Rise or Fail Rate
°C
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NL17SG07E
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
V
IL
Low−Level
Input Voltage
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
V
OL
Low−Level
Output Voltage
V
IN
=
V
IH
or
V
IL
I
OL
= 20
mA
I
OL
= 0.3 mA
I
OL
= 1.7 mA
I
OL
= 3.0 mA
I
OL
= 4.0 mA
I
OL
= 8.0 mA
I
IN
I
CC
I
OZ
Input Leakage
Current
Quiescent
Supply Current
Output Tri−
State Leakage
Current
Power Off
Leakage Cur-
rent
V
IN
= 0 to 3.6 V
V
IN
= V
CC
or GND
V
IN
= V
IH
or V
IL
,
V
OUT
= 0 to 3.6 V
V
IN
= 0 to 3.6 V
V
OUT
= 0 to 3.6 V
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
0.9 to 3.6
3.6
0.9 to 3.6
T
A
= 255C
Min
V
CC
0.70 x
V
CC
0.65 x
V
CC
0.65 x
V
CC
1.7
2.0
GND
0.30 x
V
CC
0.35 x
V
CC
0.35 x
V
CC
0.7
0.8
0.1
0.25 x
V
CC
0.25 x
V
CC
0.45
0.4
0.4
±0.1
0.5
1.0
Typ
Max
−555C
3
T
A
3
1255C
Min
V
CC
0.70 x
V
CC
0.65 x
V
CC
0.65 x
V
CC
1.7
2.0
GND
0.30 x
V
CC
0.35 x
V
CC
0.35 x
V
CC
0.7
0.8
0.1
0.25 x
V
CC
0.25 x
V
CC
0.45
0.4
0.4
±1.0
10
10
mA
mA
mA
V
Max
Unit
Symbol
V
IH
Parameter
High−Level
Input Voltage
Condition
V
V
I
OFF
0
1.0
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NL17SG07E
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
T
A
= 255C
Typ
12
5.5
4.0
3.3
2.7
2.4
12.5
5.8
4.1
3.4
2.8
2.5
13.2
6.2
4.5
3.5
3.0
2.6
8.0
6.5
5.2
4.9
3.8
3.5
11.1
9.0
7.9
7.6
6.3
6.0
16.2
14
13
12.5
11.2
11
3
4
T
A
=
−555C to +1255C
Min
Max
9.0
7.3
5.9
4.5
3.7
9.2
7.4
6.2
4.6
3.7
9.8
7.6
6.4
4.7
3.9
11.5
9.5
9.4
9.3
8.5
14
12.0
11.9
11.8
11.0
20
19.5
19.4
19.3
18.3
pF
pF
ns
ns
ns
ns
ns
Symbol
t
PZL
Parameter
Test Condition
C
L
= 10 pF,
R
1
= R
L
= 5 kW
V
CC
(V)
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 15 pF,
R
1
= R
L
= 5 kW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 30 pF,
R
1
= R
L
= 5 kW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
t
PLZ
Propagation Delay,
Disable Time,
A to Y
C
L
= 10 pF,
R
1
= R
L
= 5 kW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 15 pF,
R
1
= R
L
= 5 kW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 30 pF,
R
1
= R
L
= 5 kW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (Note 4)
0 to 3.6
0.9 to 3.6
Min
Max
7.9
5.7
3.9
3.3
2.9
8.1
6.0
4.0
3.4
3.0
8.7
6.2
4.2
3.6
3.1
10.9
8.9
8.8
8.4
8.1
13.4
11.4
11.3
10.9
10.6
20.2
18.9
18.8
18.4
18.1
Unit
ns
Propagation Delay,
Enable Time,
A to Y
4. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD

V
CC

f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption; P
D
= C
PD

V
CC2

f
in
+ I
CC

V
CC
.
www.onsemi.com
4
NL17SG07E
V
CC
A
50%
GND
t
PZL
Y
50% V
CC
t
PLZ
HIGH
IMPEDANCE
10% V
CC
Figure 3. Switching Waveform
V
CC
R
1
DUT
R
T
C
L
R
L
V
CC
GND
2
PULSE
GENERATOR
Test
t
PZL
t
PLZ
Switch
V
CC
x 2
V
CC
x 2
Figure 4. Test Circuit
ORDERING INFORMATION
Device
NL17SG07EDFT2G
Package
SC−88A
(Pb−Free)
Shipping
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5

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