B-48
01/99
IFN6449, IFN6450
N-Channel Silicon Junction Field-Effect Transistor
¥ High Voltage
Absolute maximum ratings at T
A
= 25¡C
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
IFN6449
IFN6450
– 100 V
– 100 V
– 300 V
– 200 V
10 mA
10 mA
800 mW
800 mW
6.4 mW/°C 6.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Drain Breakdown Voltage
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transfer Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
| Y
fs
|
g
os
C
iss
C
rss
V
(BR)GDO
V
(BR)GSO
I
GSS
V
GS(OFF)
I
DSS
IFN6449
Min
– 300
– 100
Max
IFN6450
Min
– 200
– 100
– 100
– 100
Max
Unit
V
V
nA
µA
V
mA
Process NJ42
Test Conditions
I
G
= – 10 µA, I
S
= ØA
I
G
= – 10 µA, I
D
= ØA
V
GS
= – 80V, V
DS
= ØV
V
GS
= – 80V, V
DS
= ØV
V
DS
= 30V, I
D
= 4 nA
V
DS
= 30V, V
GS
= ØV
T
A
= 150°C
–2
2
– 15
10
–2
2
– 15
10
0.5
3
100
10
5
0.5
3
100
10
5
mS
µS
pF
pF
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, V
GS
= ØV
V
DS
= 30V, V
GS
= ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
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(972) 487-1287
FAX
(972) 276-3375
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