BYV10EX-600P
Ultrafast power diode
4 July 2017
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
Fast switching
Isolated plastic package
Low leakage current
Low forward voltage drop
Low thermal resistance
Soft recovery characteristic
Enhanced avalanche energy capability
3. Applications
•
•
High frequency switched-mode power supplies
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
average forward current
δ = 0.5 ; square-wave pulse; T
h
≤ 71 °C;
Fig. 1; Fig. 2; Fig. 3
repetitive peak forward
current
non-repetitive peak
forward current
Parameter
forward voltage
δ = 0.5 ; t
p
= 25 μs; T
h
≤ 71 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse;
Symbol
V
F
Conditions
I
F
= 10 A; T
j
= 25 °C;
Fig. 6
I
F
= 10 A; T
j
= 150 °C;
Fig. 6
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/μs;
T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/μs;
T
j
= 25 °C;
Fig. 7
I
F
= 10 A; V
R
= 200 V; dI
F
/dt = 200 A/μs;
T
j
= 125 °C;
Fig. 7
I
F
= 10 A; V
R
= 400 V; dI
F
/dt = 500 A/μs;
T
j
= 25 °C;
Fig. 7
-
-
-
-
35
50
78
42
50
-
-
-
ns
ns
ns
ns
Min
-
-
Static characteristics
1.55
-
2
1.6
V
V
Conditions
Values
600
10
20
75
83
Typ
Max
Unit
V
A
A
A
A
Unit
Absolute maximum rating
WeEn Semiconductors
BYV10EX-600P
Ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
mb
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYV10EX-600P
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
Version
SOD113
7. Marking
Table 4. Marking codes
Type number
BYV10EX-600P
Marking codes
BYV10EX-600P
BYV10EX-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 July 2017
2 / 10
WeEn Semiconductors
BYV10EX-600P
Ultrafast power diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
DC
δ = 0.5 ; square-wave pulse; T
h
≤ 71 °C;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 μs; T
h
≤ 71 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse;
T
stg
T
j
Conditions
Values
600
600
600
10
20
75
83
-65 to 175
175
aaa-008977
Unit
V
V
V
A
A
A
A
°C
°C
25
P
tot
(W)
20
0.5
0.2
0.1
10
aaa-008948
δ=1
20
P
tot
(W)
15
2.8
2.2
a = 1.57
1.9
15
4.0
10
5
5
0
0
0
5
10
I
F(AV)
(A)
15
0
2.5
5
7.5
I
F(AV)
(A)
10
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.268 V; R
s
= 0.031 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
a = form factor = I
F(RMS)
/ I
F(AV)
Vo = 1.268 V; Rs = 0.031 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYV10EX-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 July 2017
3 / 10
WeEn Semiconductors
BYV10EX-600P
Ultrafast power diode
15
I
F(AV)
(A)
10
aaa-008981
10
4
I
FSM
(A)
10
3
aaa-008979
71 °C
5
10
2
I
F
I
FSM
0
-50
0
50
100
150
200
T
h
(°C)
10
10
-5
t
t
p
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3. Forward current as a function of heatsink
temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
BYV10EX-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 July 2017
4 / 10
WeEn Semiconductors
BYV10EX-600P
Ultrafast power diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-h)
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient free air
Conditions
With heatsink compound;
Fig. 5
Without heatsink compound
in free air
Min
-
-
-
Typ
-
-
55
Max
5.5
7.2
-
Unit
K/W
K/W
K/W
R
th(j-a)
10
Z
th(j-h)
(K/W)
1
aaa-008984
10
-1
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
t
p
T
t
p
(s)
10
P
δ=
t
p
T
10
-2
10
-3
t
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 6. Isolation characteristics
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
from cathode to external heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
PF
BYV10EX-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
4 July 2017
5 / 10
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