Datasheet> 器件分类 > 分立半导体> 晶体管> RN2221

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RN2221: 产品描述Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications; 产品类别分立半导体晶体管; 文件大小327KB，共7页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2221概述

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2221规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	IN-LINE, R-PSIP-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.8 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	60
JESD-30 代码	R-PSIP-T3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	PNP
最大功率耗散 (Abs)	0.3 W
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz

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RN2221~RN2227

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2221,RN2222,RN2223

RN2224,RN2225,RN2226,RN2227

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

High current type (I

C(MAX)

−800mA)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Low V

CE (sat)

Complementary to RN1221~RN1227

Unit: mm

Equivalent Circuit

Bias Resistor Values

Type No.

RN2221

RN2222

RN2223

RN2224

RN2225

RN2226

RN2227

R1 (kΩ)

2.2

4.7

0.47

2.2

R2 (kΩ)

2.2

4.7

JEDEC

EIAJ

TOSHIBA

Weight: 0.13g

―

2-4E1A

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2221~2227

RN2221~2224

Emitter-base voltage

RN2225, 2226

RN2227

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2221~2227

stg

EBO

Symbol

CBO

CEO

Rating

−50

−10

−5

−6

−800

300

150

−55~150

°C

Unit

2001-06-07

RN2221相似产品对比

	RN2221	RN2222	RN2223	RN2224	RN2225	RN2226	RN2227
描述	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
包装说明	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
针数	3	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 21	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 4.5
最大集电极电流 (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	60	65	70	90	90	90	90
JESD-30 代码	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz

RN2221

RN2221概述

RN2221规格参数

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