VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
cathode
+
2
2
1
3
1
Anode -
3
- Anode
• Glass passivated pellet chip junction
• Designed and qualified
JEDEC
®
-JESD 47
according
to
• Meets MSL level 1, per
LF maximum peak of 245 °C
J-STD-020,
D
2
PAK (TO-263AB)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Snap factor
Package
Circuit configuration
D
2
PAK
20 A
800 V, 1000 V, 1200 V
1.31 V
355 A
95 ns
150 °C
0.6
(TO-263AB)
Single
• Output rectification and
choppers and converters
freewheeling
in
inverters,
on
• Input rectifications where severe
conducted EMI should be met
restrictions
DESCRIPTION
The VS-20ETF..S-M3 soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
20 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
800 to 1200
355
1.31
95
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
20ETF08S-M3
20ETF10S-M3
20ETF12S-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
6
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
300
355
450
635
6350
A
2
s
A
2
s
A
UNITS
Revision: 04-Jan-18
Document Number: 94887
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
VALUES
1.31
11.88
0.93
0.1
6
UNITS
V
m
V
mA
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 A
pk
25 A/μs
25 °C
Typical
VALUES
400
6.1
1.7
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
(1)
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
DC operation
0.9
°C/W
62
2
0.07
20ETF08S
g
oz.
20ETF10S
20ETF12S
Marking device
Case style
D
2
PAK
(TO-263AB)
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
150
150
Maximum Allowable Case
Temperature (°C)
140
Maximum Allowable Case
Temperature (°C)
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
140
Ø
130
Ø
130
Conduction period
Conduction angle
120
30°
110
60°
90°
120°
180°
100
0
5
10
15
20
25
120
60°
110
30°
90°
120°
180°
100
0
5
10
15
20
25
30
35
DC
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 04-Jan-18
Document Number: 94887
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3
www.vishay.com
Vishay Semiconductors
350
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
35
Maximum Average Forward
Power Loss (W)
30
25
20
15
10
5
0
0
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
300
250
200
150
100
Ø
Conduction angle
20ETF.. Series
T
J
= 150 °C
5
10
15
20
25
20ETF.. Series
50
1
10
100
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
45
400
Maximum Average Forward
Power Loss (W)
40
35
30
25
20
15
10
5
0
0
5
DC
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
350
300
250
200
150
100
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
RMS limit
Ø
Conduction period
20ETF.. Series
T
J
= 150 °C
10
15
20
25
30
35
20ETF.. Series
50
0.01
0.1
1
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
1000
100
10
T
J
= 25 °C
T
J
= 150 °C
20ETF.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 04-Jan-18
Document Number: 94887
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3
www.vishay.com
Vishay Semiconductors
10
20ETF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
0.7
0.6
20ETF.. Series
T
J
= 25 °C
0.5
0.4
0.3
0.2
0.1
0
0
50
100
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
8
6
I
FM
= 10 A
4
I
FM
= 5 A
2
I
FM
= 1 A
0
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
1.2
20ETF.. Series
T
J
= 150 °C
0.9
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
25
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
10
I
FM
= 1 A
5
I
rr
- Typical Reverse
Recovery Current (A)
t
rr
- Typical Reverse
Recovery Time (µs)
20
15
0.6
0.3
0
0
50
100
150
200
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
6
5
4
3
I
FM
= 10 A
2
1
0
0
50
100
150
200
I
FM
= 5 A
I
FM
= 1 A
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
35
30
I
FM
= 20 A
20ETF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
I
rr
- Typical Reverse
Recovery Current (A)
25
20
15
10
I
FM
= 1 A
5
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Revision: 04-Jan-18
Document Number: 94887
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3
www.vishay.com
Vishay Semiconductors
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady state value
(DC operation)
0.1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
20
2
E
3
T
4
F
5
12
6
S
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (20 = 20 A)
Circuit configuration:
E = single
Package:
T = D
2
PAK (TO-263AB)
Type of silicon:
F = fast soft recovery rectifier
Voltage code x 100 = V
RRM
S = surface mountable
None = tape
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
08 = 800 V
10 = 1000 V
12 = 1200 V
9
-
Revision: 04-Jan-18
Document Number: 94887
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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