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EDI88128C70CB

产品描述Standard SRAM, 128KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
产品类别存储   
文件大小387KB,共8页
制造商White Electronic Designs Corporation
官网地址http://www.wedc.com/
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EDI88128C70CB概述

Standard SRAM, 128KX8, 70ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32

EDI88128C70CB规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称White Electronic Designs Corporation
包装说明0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Reach Compliance Codeunknown
Is SamacsysN
最长访问时间70 ns
其他特性AUTOMATIC POWER-DOWN
I/O 类型COMMON
JESD-30 代码R-CDIP-T32
长度40.64 mm
内存密度1048576 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端子数量32
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织128KX8
输出特性3-STATE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装等效代码DIP32,.6
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
认证状态Not Qualified
筛选级别MIL-STD-883
座面最大高度3.937 mm
最大待机电流0.005 A
最小待机电流4.5 V
最大压摆率0.095 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度15.24 mm
Base Number Matches1

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White Electronic Designs
128Kx8 MONOLITHIC SRAM, SMD 5962-89598
FEATURES
Access Times of 70, 85, 100ns
Available with Single Chip Selects (EDI88128) or
Dual Chip Selects (EDI88130)
2V Data Retention (LP Versions)
CS# and OE# Functions for Bus Control
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
Organized as 128Kx8
Industrial, Military and Commercial Temperature
Ranges
Thru-hole and Surface Mount Packages JEDEC
Pinout
• 32 pin Ceramic DIP, 0.6 mils wide (Package 9)
• 32 lead Ceramic SOJ (Package 140)
Single +5V (±10%) Supply Operation
EDI88128C
The EDI88128C is a high speed, high performance,
Monolithic CMOS Static RAM organized as 128Kx8.
The device is also available as EDI88130C with an
additional chip select line (CS2) which will automatically
power down the device when proper logic levels are
applied.
The second chip select line (CS2) can be used to provide
system memory security during power down in non-battery
backed up systems and simplifiy decoding schemes in
memory banking where large multiple pages of memory
are required.
The EDI88128C and the EDI88130C have eight bi-
directional input-output lines to provide simultaneous
access to all bits in a word. An automatic power down
feature permits the on-chip circuitry to enter a very low
standby mode and be brought back into operation at a
speed equal to the address access time.
Low power versions, EDI88128LP and EDI88130LP, offer
a 2V data retention function for battery back-up opperation.
Military product is available compliant to Appendix A of
MIL-PRF-38535.
FIGURE 1 – PIN CONFIGURATION
32 DIP
32 SOJ
PIN DESCRIPTION
I/O0-7
A0-16
WE#
CS1#, CS2
OE#
V
CC
V
SS
NC
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Selects
Output Enable
Power (+5V ±10%)
Ground
Not Connected
Top View
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
I/OØ
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 V
CC
31 A15
30 NC/CS2*
29 WE#
28 A13
27 A8
26 A9
25 A11
24 OE#
23 A10
22 CS1#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
BLOCK DIAGRAM
* Pin 30 is NC for 88128 or CS2 for 88130.
April 2005
Rev. 17
WE#
CS1#
CS2
OE#
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

 
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