NTD4806N, NVD4806N
Power MOSFET
Features
30 V, 76 A, Single N−Channel, DPAK/IPAK
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC−Q101 Qualified and PPAP Capable
−
NVD4806N
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
30 V
R
DS(on)
MAX
6.0 mW @ 10 V
9.4 mW @ 4.5 V
D
I
D
MAX
76 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
•
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (R
qJA
) (Note 1)
Power Dissipation
(R
qJA
) (Note 1)
Continuous Drain
Current (R
qJA
) (Note 2)
Power Dissipation
(R
qJA
) (Note 2)
Continuous Drain
Current (R
qJC
)
(Note 1)
Power Dissipation
(R
qJC
) (Note 1)
Pulsed Drain Current
t
p
=10ms
Current Limited by Package
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
"20
15.6
12
2.65
11.3
8.8
1.4
79
61
68
150
45
−55
to
175
50
6.0
220
W
A
A
°C
A
V/ns
mJ
W
A
W
1 2
A
3
Unit
V
V
A
G
N−Channel
S
4
4
1
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
2 3
IPAK
CASE 369AD
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
48
06NG
4
Drain
AYWW
48
06NG
1 2 3
Gate Drain Source
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
Publication Order Number:
NTD4806N/D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
L = 1.0 mH, I
L(pk)
= 21 A, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
2
1 Drain 3
Gate Source
A
Y
WW
4806N
G
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
April, 2017
−
Rev. 11
1
NTD4806N, NVD4806N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Tab (Drain)
Junction−to−Ambient
−
Steady State (Note 1)
Junction−to−Ambient
−
Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
2.2
3.5
56.7
106.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 to 11.5 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
13.9
29.7
18.3
7.8
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
2142
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
480
251
15
3.0
7.0
7.0
37
nC
23
nC
pF
gFS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
V
GS
= V
DS
, I
D
= 250
mA
1.5
6.0
4.9
4.8
7.9
7.5
14
S
9.4
6.0
2.5
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
27
1.0
10
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
"20
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4806N, NVD4806N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (continued)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
ta
tb
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIs/dt= 100 A/ms,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.5
23.8
26
4.7
ns
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 30 A
0.9
0.8
26
13
13
16
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
2.49
0.0164
1.88
3.46
1.0
nH
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4806N, NVD4806N
TYPICAL PERFORMANCE CURVES
100
I
D
, DRAIN CURRENT (AMPS)
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
6V
5V
4.5 V
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
5
I
D
, DRAIN CURRENT (AMPS)
V
DS
≥
10 V
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0
1
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.048
0.043
0.038
0.033
0.028
0.023
0.018
0.013
0.008
0.003
3
4
5
6
7
8
9
10
I
D
= 30 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.015
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
0.010
0.005
V
GS
= 11.5 V
0
50
55
60
65
70
75
80
85
90
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.0
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1.5
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 175°C
1.0
1000
T
J
= 125°C
0.5
100
0
−50 −25
10
0
25
50
75
100
125
150
175
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
NTD4806N, NVD4806N
TYPICAL PERFORMANCE CURVES
4000
8
V
DS
= 0 V V
GS
= 0 V
C
iss
T
J
= 25°C
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
3000
6
Q
1
Q
T
Q
2
V
GS
2000
C
rss
1000
C
iss
4
2
C
oss
0
10
C
rss
5
V
GS
0
V
DS
5
10
15
20
25
0
I
D
= 30 A
V
GS
= 4.5 V
T
J
= 25°C
0
15
5
10
Q
G
, TOTAL GATE CHARGE (nC)
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
30
IS, SOURCE CURRENT (AMPS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
t
r
t
d(off)
V
GS
= 0 V
25
20
15
10
5
0
0.5
T
J
= 25°C
t, TIME (ns)
100
10
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (AMPS)
250
Figure 10. Diode Forward Voltage vs. Current
I
D
= 21 A
200
150
100
50
0
25
100
10
ms
100
ms
10
1
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1 ms
10 ms
dc
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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