SiC
Silicon Carbide Diode
2nd Generation thinQ!™
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Data Sheet
Rev. 2.1, 2011-05-25
Final
Industrial & Multimarket
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
1
Description
The second generation of Infineon SiC Schottky diodes has emerged over the years as the
industry standard. The IDYxxS120 products are extending the already broad portfolio with
the new TO-247HC (high creepage) package.
The new package layout is fully compatible with the industry standard TO247, and can
therefore easily be placed in already existing designs, with no extra efforts.
The higher creepage distance increases the safety margin against the risk of short circuits,
especially arcing, which might be triggered by the presence of dust or dirt inside the system.
This reduces the need of additional chemical (silicone gel or creams) or mechanical (sheaths
or foils) solutions to lower the pollution level between the leads, with all consequent benefits
of a lean and faster manufacturing process
Features
•
•
•
•
•
•
•
•
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Optimized for high temperature operation
Benefits
•
•
•
•
•
•
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures and less fans
Package design with high creepage distance
Reduced EMI
Applications
•
•
Solar applications; UPS; Motor Drives;
SMPS e.g.; CCM PFC
Table 1
Parameter
Key Performance Parameters
Value
1200
36
Unit
V
nC
A
V
DC
Q
C
I
F
@ T
C
< 150°C
10
Table 2
Pin 1
A
Pin Definition
Pin2
C
Pin 3
A
Package
PG-TO247HC-3
Marking
D10S120
Related Links
IFX SiC Diodes Webpage
Type / Ordering Code
IDY10S120
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.1, 2011-05-25
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Table of Contents
Table of Contents
1
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
3
4
5
6
7
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
4
Rev. 2.1, 2011-05-25
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Min.
Values
(leg/device)
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
5/10
29/58
25/48
125/250
4/16
3/12
1200
50
75/150
150
0.6
V
V/ns
W
°C
Ncm
M3 screws
Maximum of mounting
processes:3
A²s
A
T
C
= < 150°C
T
C
= 25°C,
t
p
= 10 ms
T
C
= 150°C,
t
p
= 10 ms
T
C
= 25°C,
t
p
= 10 µs
T
C
= 25°C,
t
p
= 10 ms
T
C
= 150°C,
t
p
= 10 ms
T
j
= 25°C
V
R
= 0...960 V
T
C
= 25 °C
Unit
Note / Test Condition
Continuous forward current
Surge non-repetitive
forward current, sine halfwave
Non-repetitive peak forward current
i² t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
I
F
I
F, SM
I
F, max
∫i²dt
V
RRM
dv/dt
P
tot
T
j
,T
stg
-
-
-
-
-
-
-
-
-
-55
-
3
Table 4
Parameter
Thermal characteristics
Thermal characteristics
Symbol
Min.
Values
(leg/device)
Typ.
-
-
-
Max.
2/1
40
260
°C
K/W
leaded
1.6 mm (0.063 in.)
from case for 10 s
Unit
Note /
Test Condition
Thermal resistance, junction - case
R
thJC
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at
leads
-
-
-
R
thJA
T
sold
Final Data Sheet
5
Rev. 2.1, 2011-05-25
2nd Generation thinQ!™ SiC Schottky Diode
IDY10S120
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at
T
j
=25 °C, unless otherwise specified.
Table 5
Parameter
Static characteristics
Symbol
Min.
DC blocking voltage
Diode forward voltage
Reverse current
Values
(leg/device)
Typ.
-
1.65
2.55
5/10
20/40
120/240
500/1000
µA
Max.
-
1.8
V
Unit
Note / Test Condition
V
DC
V
F
I
R
1200
-
-
-
-
T
j
= 25 °C,
I
R
= 0.1 mA
I
F
= 10 A,
T
j
= 25 °C
I
F
= 10 A,
T
j
= 150 °C
I
R
= 1200 V,
T
j
=25 °C
I
R
= 1200 V,
T
j
=150 °C
Table 6
Parameter
AC characteristics
Symbol
Min.
Values
(leg/device)
Typ.
18/36
-
250/500
20/40
18/36
Max.
-
<10
-
-
-
nC
ns
pF
Unit
Note /
Test Condition
Total capacitive charge
Switching time
1)
Q
c
t
c
C
-
-
-
-
-
V
R
= 400 V,
F
≤I
F
max
di
F
/dt =200 A/μs,
T
j
=150 °C
V
R
= 1 V,
f=
1 MHz
V
R
= 300 V,
f=
1 MHz
V
R
= 600 V,
f=
1 MHz
1)
t
c
is the time constant for the capacitive displacement current waveform (independent from
T
j
,
I
LOAD
and
di/dt),
different from
t
rr
which is dependent on
T
j
,
I
LOAD
and
di/dt.
No reverse recovery time constant
t
rr
due to absence of minority carrier injection.
Final Data Sheet
6
Rev. 2.1, 2011-05-25
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