BYV25FB-600
24 August 2018
Enhanced ultrafast power diode
Product data sheet
1. General description
Enhanced ultrafast power diode in a SOT404 (D2PAK) plastic package
2. Features and benefits
•
•
•
•
•
High thermal cycling performance
Low on-state losses
Low thermal resistance
Soft recovery characteristic
Surface-mountable package
3. Applications
•
•
Dual Mode (DCM and CCM) PFC
Power Factor Correction (PFC) for Interleaved Topology
4. Quick reference data
Table 1. Quick reference data
Symbol
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
reverse voltage
average forward
current
Conditions
DC
δ = 0.5 ; T
mb
≤ 126 °C; SQW;
Fig. 1;
Fig. 2
Min
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
1.3
1.1
17.5
Max
600
5
10
60
66
1.9
1.7
35
Unit
V
A
A
A
A
V
V
ns
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 126 °C;
current
SQW
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; SIN;
Fig. 3
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN;
Fig. 3
I
F
= 5 A; T
j
= 25 °C;
Fig. 5
I
F
= 5 A; T
j
= 150 °C;
Fig. 5
Static characteristics
V
F
forward voltage
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 6
WeEn Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
n.c.
K
A
mb
not connected
cathode[1]
anode
mounting base; cathode
1
2
3
Simplified outline
mb
Graphic symbol
K
A
001aaa020
D2PAK (SOT404)
[1]
It is not possible to connect to pin 2 of the SOT404 package.
6. Ordering information
Table 3. Ordering information
Type number
BYV25FB-600
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
BYV25FB-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
24 August 2018
2 / 11
WeEn Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
14
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
Conditions
Min
-
-
Max
600
600
600
5
10
60
66
150
150
003aaf431
Unit
V
V
V
A
A
A
A
°C
°C
DC
δ = 0.5 ; T
mb
≤ 126 °C; SQW;
Fig. 1;
Fig. 2
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 126 °C; SQW
t
p
= 10 ms; T
j(init)
= 25 °C; SIN;
Fig. 3
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN;
Fig. 3
-
-
-
-
-
-40
-
003aaf430
P
tot
(W)
12
10
8
6
4
2
0
0.1
0.5
δ=1
10
P
tot
(W)
8
2.2
6
4.0
4
2.8
a = 1.57
1.9
0.2
2
0
2
4
6
I
F(AV)
(A)
8
0
0
1
2
3
4
5
I
F(AV)
(A)
V
o
= 1.50 V; R
s
= 0.041 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
V
o
= 1.50 V; R
s
= 0.041 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYV25FB-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
24 August 2018
3 / 11
WeEn Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
10
3
003aaf446
I
FSM
(A)
10
2
P
10
1
10
-5
t
p
t
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3. Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
BYV25FB-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
24 August 2018
4 / 11
WeEn Semiconductors
BYV25FB-600
Enhanced ultrafast power diode
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
Fig. 4
Min
-
Typ
-
Max
2.5
Unit
K/W
R
th(j-a)
in free air
[1]
-
50
-
K/W
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
10
Z
th(j-mb)
(K/W)
1
001aag913
10
- 1
P
δ=
t
p
T
10
- 2
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
t
T
1
10
t
p
(s)
10
- 1
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse width
BYV25FB-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
24 August 2018
5 / 11
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