BYC5DX-500
Hyperfast power diode
Rev.02 - 29 January 2018
Product data sheet
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
•
•
•
Isolated plastic package
Low thermal resistance
Low reverse recovery current
Reduces switching losses in associated MOSFET
3. Applications
•
•
•
Continuous Current Mode (CCM) Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode power supplies
Half-bridge lighting ballasts
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
average forward current
δ = 0.5 ; square-wave pulse; T
h
≤ 103 °C;
Fig. 1; Fig. 2
repetitive peak forward
current
non-repetitive peak
forward current
Parameter
forward voltage
δ = 0.5 ; t
p
= 25 μs; T
h
≤ 103 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 3
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse
Symbol
V
F
Conditions
I
F
= 5 A; T
j
= 25 °C;
Fig. 5
I
F
= 5 A; T
j
= 150 °C;
Fig. 5
I
F
= 10 A; T
j
= 150 °C;
Fig. 5
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/μs;
T
j
= 25 °C;
Fig. 6
-
15
30
ns
Min
-
-
-
Static characteristics
1.5
1.15
1.4
2
1.45
1.7
V
V
V
Conditions
Values
500
5
10
40
44
Typ
Max
Unit
V
A
A
A
A
Unit
Absolute maximum rating
WeEn Semiconductors
Hyperfast power diode
BYC5DX-500
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
mb
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
SOD113 (2-lead TO-220F)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYC5DX-500
TO-220F
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 "full pack"
Version
SOD113
7. Marking
Table 4. Marking codes
Type number
BYC5DX-500
Marking codes
BYC5DX-500
BYC5DX-500
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
29 January 2018
2 / 12
WeEn Semiconductors
Hyperfast power diode
BYC5DX-500
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
003aag305
Conditions
Values
500
500
Unit
V
V
V
A
A
A
A
°C
°C
003aag306
DC
δ = 0.5 ; square-wave pulse; T
h
≤ 103 °C;
Fig. 1; Fig. 2
δ = 0.5 ; t
p
= 25 μs; T
h
≤ 103 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 3
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse
500
5
10
40
44
-40 to 150
150
T
stg
T
j
P
tot
(W)
10
12
δ=1
0.5
10
P
tot
(W)
8
2.2
2.8
4.0
1.9
a = 1.57
8
0.2
6
4
2
2
6
0.1
4
0
0
2
4
6
I
F(AV)
(A)
8
0
0
1
2
3
4
5
I
F(AV)
(A)
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.141 V; R
s
= 0.057 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 1.141 V; R
s
= 0.057 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC5DX-500
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
29 January 2018
3 / 12
WeEn Semiconductors
Hyperfast power diode
BYC5DX-500
Fig. 3. Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
BYC5DX-500
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
29 January 2018
4 / 12
WeEn Semiconductors
Hyperfast power diode
BYC5DX-500
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-h)
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient free air
Conditions
with heatsink compound;
Fig 4
without heatsink compound
in free air
Min
-
-
-
Typ
-
-
60
Max
5.5
7.2
-
Unit
K/W
K/W
K/W
R
th(j-a)
10
Z
th(j-h)
(K/W)
1
001aaf257
10
- 1
P
δ=
t
p
T
10
- 2
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
t
T
1
t
p
(s)
10
10
- 1
Fig. 4. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz; from cathode to external
heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYC5DX-500
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
29 January 2018
5 / 12
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