BTA316X-800B0
3Q Hi-Com Triac
12 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. This "series B0" triac will commutate the full rated RMS current at the maximum rated
junction temperature without the aid of a snubber.
2. Features and benefits
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High immunity to false turn-on by dV/dt
High minimum I
GT
for guaranteed immunity to gate noise
High voltage capability
Isolated mounting base package
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high commutation capability with maximum false trigger immunity
3. Applications
•
•
•
•
Electronic thermostats
High power motor controls - e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Refrigeration and air conditioning compressors
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
h
≤ 45 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
10
Typ
-
-
-
-
-
-
Max
800
16
140
150
125
50
Unit
V
A
A
A
°C
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA316X-800B0
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
10
10
-
-
2500
Typ
-
-
-
1.3
-
Max
50
50
60
1.5
-
Unit
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 18 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
Dynamic characteristics
dI
com
/dt
20
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
BTA316X-800B0
Package
Name
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BTA316X-800B0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
12 September 2018
2 / 13
WeEn Semiconductors
BTA316X-800B0
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
120
003aab669
Conditions
Min
-
Max
800
16
140
150
98
100
2
5
0.5
150
125
003aab667
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
h
≤ 45 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
20
I
T(RMS)
(A)
100
80
I
T(RMS)
(A)
16
12
60
8
40
20
0
10
-2
4
10
-1
1
10
surge duration (s)
0
-50
0
50
100 T (°C) 150
h
f = 50 Hz;
T
h
= 45 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of heatsink
temperature; maximum values
BTA316X-800B0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
12 September 2018
3 / 13
WeEn Semiconductors
BTA316X-800B0
3Q Hi-Com Triac
20
P
tot
(W)
15
003aab689
conduction
angle,
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.976
1.570
1.329
1.110
α
α = 180°
120°
90°
60°
30°
10
5
0
0
2
4
6
8
10
12
14
I
T(RMS)
(A)
16
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
160
I
TSM
(A)
120
003aab668
80
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA316X-800B0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
12 September 2018
4 / 13
WeEn Semiconductors
BTA316X-800B0
3Q Hi-Com Triac
10
3
I
TSM
(A)
(1)
003aab671
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA316X-800B0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
12 September 2018
5 / 13
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