BTA208S-800F
3Q Hi-Com Triac
13 July 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable
plastic package. This "series F" triac balances the requirements of commutation performance
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including
microcontrollers in higher noise environments.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct triggering from low power drivers and logic ICs
High commutation capability
High voltage capability
Intermediate sensitivity for maximum noise immunity and logic level triggering
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
•
•
Electronic thermostats
General purpose motor controls
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
-
Typ
-
-
-
-
-
-
-
Max
800
8
65
71
125
25
25
Unit
V
A
A
A
°C
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA208S-800F
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
70
Typ
-
-
1.3
-
Max
25
30
1.65
-
Unit
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 10 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 110 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 0.1 V/µs; gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 10 V/µs; gate open circuit;
Fig. 12
Dynamic characteristics
dI
com
/dt
20
14
-
-
-
-
A/ms
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2[1]
gate
mounting base; connected to
main terminal 2
DPAK (SOT428)
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
Simplified outline
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
BTA208S-800F
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
7. Marking
Table 4. Marking codes
Type number
BTA208S-800F
Marking code
208S8F
BTA208S-800F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
13 July 2018
2 / 13
WeEn Semiconductors
BTA208S-800F
3Q Hi-Com Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
10
I
T(RMS)
(A)
8
102 °C
003aaf581
Conditions
Min
-
Max
800
8
65
71
21
100
2
5
0.5
150
125
003aaf617
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 50 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
25
I
T(RMS)
(A)
20
6
15
4
10
2
5
0
- 50
0
50
100
150
T
mb
(°C)
0
10
- 2
10
- 1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 102 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA208S-800F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
13 July 2018
3 / 13
WeEn Semiconductors
BTA208S-800F
3Q Hi-Com Triac
P
tot
(W)
10
8
6
12
003aaf618
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.976
1.570
1.329
1.110
α
α = 180°
120°
90°
60°
30°
101
T
mb(max)
(°C)
105
109
113
117
121
4
2
0
0
2
4
6
8
I
T(RMS)
(A)
125
10
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
80
I
TSM
(A)
60
003aaa968
40
I
T
20
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA208S-800F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
13 July 2018
4 / 13
WeEn Semiconductors
BTA208S-800F
3Q Hi-Com Triac
10
3
003aab121
I
T
I
TSM
(A)
(1)
10
2
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
- 2
10
- 1
1
10
t
p
(ms)
10
2
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA208S-800F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
13 July 2018
5 / 13
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