TB7107FN
TOSHIBA BiCD Integrated Circuit
Silicon Monolithic
TB7107FN
Buck DC-DC Converter IC
The TB7107FN is a single-chip buck DC-DC converter IC utilizing a
chopper circuit. The TB7107FN adopts bootstrap system and contains
high-speed and low-on-resistance N-channel MOSFETs for the high side
main switch to achieve high efficiency.
Features
•
•
•
•
•
•
•
•
•
•
Enables up to 2 A of load current (I
OUT
) with a minimum of external
SON8-P-0303-0.65A
components.
High efficiency:
η =
87% (typ.) (@V
IN
=
12 V, V
OUT
=
3.3 V and I
OUT
Weight: 0.017 g (typ.)
=
0.7A)
Operating voltage range: V
IN
= 4.5 V to 20 V
Low ON-resistance: R
DS (ON)
=
0.2
Ω
(high-side) typical (@V
IN
=
12 V, Tj
=
25°C)
Oscillation frequency: f
OSC
=
380 kHz (typ.)
Reference voltage: V
FB
=
0.8 V ±2.25%(@ T
j
=
25
℃)
Because of an external phase compensation element, the optimal phase compensation according to the output
filter capacitor can be realized.
Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor.
Housed in a small surface-mount package (PS-8) with low thermal resistance.
Soft-start time adjustable by an external capacitor
Part Marking
Part Number (or abbreviation code)
Lot No.
Pin Assignment
SS
EN
COMP
8
7
6
V
FB
5
7107
1
The dot (•) on the top surface indicates pin 1.
*:
BOOT
2
V
IN
3
L
X
4
GND
The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the
following two digits indicates the week of manufacture between 01 and either 52 or 53.
Manufacturing week code
(The first week of the year is 01; the last week is 52 or 53.)
Manufacturing year code (last digit of the year of manufacture)
This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care.
The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary
small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily
protect Product under all circumstances. When incorporating Product into your system, please design the system to
avoid such overloads upon the Product, and to shut down or otherwise relieve the Product of such overload
conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document
and other documents referenced in this document.
Start of commercial production
2009-10
1
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TB7107FN
Ordering Information
Part Number
TB7107FN (TE85L, F)
Shipping
Embossed tape (3000 units per reel)
Block Diagram
V
IN
Regulator
Current detection
Oscillator
Under
voltage
lockout
V
FB
Constant-current
source (5
μA)
Error Amplifier
-
-
Soft
Start
+
Slope
Compensation
+
-
BOOT
Driver
L
X
Control
Logic
SS
EN
Short-Circuit
Protection
Ref.Voltage
(0.8 V)
COMP
GND
Pin Description
Pin No.
Symbol
Bootstrap pin
1
BOOT
This pin is connected to Bootstrap capacitor. A 0.1
μF
bootstrap capacitor is required between
BOOT pin and L
X
pin.
Input pin
This pin is placed in the standby state if EN
=
low. Standby current is 60
μA
(@V
IN
=12V) or less.
Switch pin
This pin is connected to high-side N-channel MOSFET.
Ground pin
Feedback pin
This input is fed into an internal error amplifier with a reference voltage of 0.8 V (typ.).
Phase compensation pin
Pin for connecting an error amplifier phase compensation resistor and capacitor.
Enable pin
7
EN
When V
EN
≥
1.8 V (@ V
IN
=
12 V), the internal circuitry is allowed to operate and thus enable
the switching operation of the output section. When V
EN
≤
0.5 V (@ V
IN
=12
V), the internal
circuitry is disabled, putting the TB7107FN in Standby mode.
This pin has an internal pull-up current of 15 µA(typ.).
Soft-start pin
The soft-start time can be adjusted with an external capacitor.
8
SS
The external capacitor is charged from a 5
μA
(typ.) constant-current source, and the reference
voltage of the error amplifier is regulated between 0 V and 0.8 V. The external capacitor is
discharged when EN
=
low and in case of undervoltage lockout or thermal shutdown.
Description
2
V
IN
3
4
5
L
X
GND
V
FB
6
COMP
2
2013-11-01
TB7107FN
Absolute Maximum Ratings (Ta
=
25°C)
Characteristics
Input pin voltage
Bootstrap pin voltage
Bootstrap pin - Switch pin voltage
Switch pin voltage
Feedback pin voltage
Enable pin voltage
Soft-start pin voltage
Phase compensation pin voltage
Switch pin current
Power dissipation
(Note 2)
(Note 1)
Symbol
V
IN
V
BOOT
V
BOOT
-V
LX
V
LX
V
FB
V
EN
V
SS
V
COMP
I
LX
P
D
T
jopr
T
j
T
stg
Rating
-0.3 to 25
-0.3 to 28
-0.3 to 6
-0.3 to 25
-0.3 to 6
-0.3 to 25
-0.3 to 6
-0.3 to 6
-2.3
0.9
-40 to 125
150
-55 to 150
Unit
V
V
V
V
V
V
V
V
A
W
℃
°C
°C
Operating junction temperature
Junction temperature
Storage temperature
(Note 3)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc)
Note 1: The switch pin voltage (V
LX
) doesn’t include the peak voltage generated by TB7107FN’s switching.
Thermal Resistance Characteristics
Characteristics
Thermal resistance, junction to ambient
Symbol
R
th (j-a)
Max
110.2 (Note 2)
Unit
°C/W
Note 2:
Glass epoxy board
Material: FR-4
25.4
×
25.4
×
0.8
(Unit: mm)
Note 3: The TB7107FN may go into thermal shutdown at the rated maximum junction temperature. Thermal design
is required to ensure that the rated maximum operating junction temperature, T
jopr
, will not be exceeded.
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TB7107FN
Electrical Characteristics
(Tj
=
25°C, V
IN
=
4.5 to 20 V, unless otherwise specified)
Characteristics
Operating input voltage
Operating current
Output voltage range
Standby current
Symbol
V
IN(OPR)
I
IN
Test Condition
⎯
V
IN
= 12V ,V
EN
= 5V ,V
FB
= 2 V
Min
4.5
⎯
0.8
⎯
Typ.
⎯
1.8
⎯
⎯
Max
20
2.5
V
IN
-2
60
Unit
V
mA
V
μA
V
OUT(OPR)
V
EN
= V
IN
I
IN(STBY)
V
IN
= 12 V , V
EN
= 0 V
V
FB
= 0.8 V
V
IN
= 12 V, V
EN
= 0 V
V
FB
= 0.8 V , V
LX
= 0 V
V
IN
= 12 V
V
IN
= 12V
V
IN
= 12V, V
EN
= 5 V
V
IN
= 12V, V
EN
= 0 V
V
IN
= 12 V , V
EN
= 5 V
V
IN
= 12 V , V
EN
= 5 V
V
FB
= 2V
V
IN
= 12 V , V
EN
= 5 V
V
FB
= 0.7V , V
COMP
= 0.5 V
V
IN
= 12 V , V
EN
= 5 V
V
FB
= 0.9V , V
COMP
= 0.5 V
V
IN
= 12V , V
EN
= 5V
I
LX
= - 1A
V
IN
= 12 V , V
EN
=5 V
I
LX
= 100 mA
V
IN
= 12V , V
EN
= 5V
V
IN
= 12 V , V
EN
= 5V , I
OUT
= 0A
High-side switch leakage current
I
LEAK(H)
V
IH(EN)
V
IL(EN)
I
IH(EN)
I
IL(EN)
V
FB
I
FB
⎯
1.8
⎯
-5
⎯
0.782
-1
⎯
⎯
⎯
⎯
-15
0.8
⎯
10
⎯
0.5
5
⎯
0.818
1
μA
EN threshold voltage
V
EN input current
V
FB
input voltage
V
FB
input current
μA
V
μA
I
COMP(H)
Phase compensation input current
I
COMP(L)
⎯
-40
⎯
μA
⎯
40
⎯
High-side switch on-state resistance
RDS(ON)(H)
⎯
0.2
⎯
Ω
Low-side switch on-state resistance
Oscillation frequency
RDS(ON)(L)
⎯
300
1.5
380
⎯
460
Ω
kHz
f
OSC
t
SS
I
SS
Dmax
T
SD
ΔT
SD
V
UV
V
UVR
ΔV
UV
I
LIM
Internal soft-start time
Measured between 0% and
90%points at V
OUT
V
IN
= 12 V , V
EN
= 5 V
V
IN
= 12 V , V
EN
= 5 V
V
IN
= 12 V , V
EN
= 5 V
V
IN
= 12 V , V
EN
= 5 V
V
EN
= V
IN
V
EN
= V
IN
V
EN
= V
IN
V
IN
= 4.5V to 20 V , V
EN
= 5V
V
OUT
= 2 V
0.5
1
2
ms
μA
%
External soft-start charge current
High-side switch duty cycle
Thermal shutdown
(TSD)
Detection
temperature
Hysteresis
Detection
voltage
Undervoltage
lockout (UVLO)
Recovery
voltage
Hysteresis
L
X
current limit
-3
⎯
⎯
⎯
2.9
3.2
⎯
2.9
-5
88
160
15
3.2
3.5
0.3
3.5
-8
⎯
⎯
°C
⎯
3.5
3.8
⎯
⎯
A
V
Note on Electrical Characteristics
The test condition T
j
=
25°C means a state where any drifts in electrical characteristics incurred by an increase
in the chip’s junction temperature can be ignored during pulse testing.
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2013-11-01
TB7107FN
Application Circuit Example
Figure 1 shows a typical application circuit using a low-ESR electrolytic or ceramic capacitor for C
OUT
.
V
IN
=4.5 V to 20 V
V
IN
EN
COMP
R
P
C
IN
GND
C
P
GND
C
SS
SS
TB7107FN
C
BOOT
BOOT
L
X
L
V
OUT
EN
R
FB1
V
FB
C
OUT
R
FB2
GND
SBD
Figure 1 TB7107FN Application Circuit Example
Component values (reference value@ V
IN
=
12 V, V
OUT
=
3.3 V, Ta
=
25°C)
C
IN
: Input filter capacitor
=
10
μF
(ceramic capacitor: GRM31CR71E106K manufactured by Murata Manufacturing Co., Ltd.)
C
OUT
: Output filter capacitor
=
10
μF
(ceramic capacitor: GRM31CR71E106K manufactured by Murata Manufacturing Co., Ltd.)
R
FB1
: Output voltage setting resistor
=
7.5 kΩ
R
FB2
: Output voltage setting resistor
=
2.4 kΩ
C
P
: Phase compensation capacitance
R
P
: Phase compensation resistance
L: Inductor = 10
μH
(SLF10165T-100M3R83PF or SLF7055T-100M2R5-3PF manufactured by
TDK-EPC Corporation)
SBD: Schottky barrier diode CRS30I30A (manufactured by Toshiba Corporation)
C
BOOT
: Bootstrap capacitor = 0.1
μF
(GRM188R71H104J manufactured by Murata Manufacturing Co., Ltd.)
C
SS
is a capacitor for adjusting the soft-start time.
Examples of Component Values (For Reference Only)
Output Voltage
Setting
V
OUT
1.2 V
1.51 V
1.8 V
2.5 V
3.3 V
5.0V
Input
Capacitance
C
IN
10
μF
10
μF
10
μF
10
μF
10
μF
10
μF
Output
Capacitance
C
OUT
20
μF
20
μF
20
μF
20
μF
20
μF
20
μF
Feedback
Resistor
R
FB1
7.5 kΩ
16 kΩ
15 kΩ
5.1 kΩ
7.5 kΩ
27 kΩ
Feedback
Resistor
R
FB2
15 kΩ
18 kΩ
12 kΩ
2.4 kΩ
2.4 kΩ
5.1 kΩ
Phase
Compensation
Capacitance
C
P
4700 pF
4700 pF
2200 pF
2200 pF
2200 pF
2200 pF
Phase
Compensation
Resistance
R
P
10 kΩ
10 kΩ
15 kΩ
22 kΩ
22 kΩ
33 kΩ
Inductance
L
10
μH
10
μH
10
μH
10
μH
10
μH
10
μH
Component values need to be adjusted, depending on the TB7107FN’s I/O conditions and the board layout.
5
2013-11-01
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