VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 18 A
Base
cathode
2
FEATURES
•
•
•
•
3
Anode
2
1
1
3
N/C
D
2
PAK
(TO-263AB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Circuit configuration
18 A
35 V, 40 V, 45 V
0.53 V
25 mA at 125 °C
175 °C
24 mJ
D
2
PAK (TO-263AB)
Single
175 °C T
J
operation
Low forward voltage drop
High frequency operation
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Range
t
p
= 5 μs sine
18 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
18
35 to 45
1800
0.53
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-18TQ035S-M3
35
VS-18TQ040S-M3
40
VS-18TQ045S-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 149 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
VALUES
18
1800
390
24
3.6
A
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 27-Oct-17
Document Number: 94928
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
18 A
36 A
18 A
36 A
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.60
0.72
0.53
0.67
2.5
25
1400
8.0
10 000
mA
pF
nH
V/μs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
V
FM (1)
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum
Case style D
2
PAK (TO-263AB)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth, and greased
TEST CONDITIONS
VALUES
-55 to 175
1.50
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
18TQ035S
Marking device
18TQ040S
18TQ045S
UNITS
°C
1000
1000
T
J
= 175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
100
T
J
= 150 °C
10
1
0.1
T
J
= 75 °C
0.01
0.001
T
J
= 25 °C
0.0001
T
J
= 50 °C
T
J
= 125 °C
T
J
= 100 °C
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 27-Oct-17
Document Number: 94928
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
10 000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
.
100
0.1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
15
Allowable Case Temperature (°C)
175
170
165
160
155
150
0
4
8
12
DC
Average Power Loss (W)
18TQ
R
thJC
(DC) = 1.50 °C/W
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
10
RMS limit
5
DC
0
16
20
24
28
0
4
8
12
16
20
24
28
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 27-Oct-17
Document Number: 94928
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and with rated V
RRM
applied
following surge
Vishay Semiconductors
1000
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
ORDERING INFORMATION TABLE
Device code
VS-
18
T
Q
045
S
TRL -M3
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
2
3
4
5
6
7
8
Vishay
Semiconductors
product
Current rating (18 A)
Circuit configuration: T = TO-220
Schottky
“Q”
series
Voltage ratings
S
= D
2
PAK (TO-263AB)
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
035 = 35 V
040 = 40 V
045 = 45 V
8
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
Revision: 27-Oct-17
Document Number: 94928
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
QUANTITY PER T/R
50
800
800
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
ORDERING INFORMATION
PREFERRED P/N
VS-18TQ035S-M3
VS-18TQ035STRR-M3
VS-18TQ035STRL-M3
VS-18TQ040S-M3
VS-18TQ040STRR-M3
VS-18TQ040STRL-M3
VS-18TQ045S-M3
VS-18TQ045STRR-M3
VS-18TQ045STRL-M3
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?96164
www.vishay.com/doc?95444
www.vishay.com/doc?96424
www.vishay.com/doc?96209
Revision: 27-Oct-17
Document Number: 94928
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
